发明授权
US08471360B2 Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
有权
具有具有减小的横截面积的碳开关材料的存储单元及其形成方法
- 专利标题： Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
- 专利标题（中）： 具有具有减小的横截面积的碳开关材料的存储单元及其形成方法
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申请号： US12760156申请日： 2010-04-14
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公开(公告)号： US08471360B2公开(公告)日： 2013-06-25
- 发明人: Franz Kreupl , Er-Xuan Ping , Jingyan Zhang , Huiwen Xu
- 申请人： Franz Kreupl , Er-Xuan Ping , Jingyan Zhang , Huiwen Xu
- 申请人地址： US CA Milpitas
- 专利权人： SanDisk 3D LLC
- 当前专利权人： SanDisk 3D LLC
- 当前专利权人地址： US CA Milpitas
- 代理机构： Dugan & Dugan, PC
- 主分类号： H01L29/92
- IPC分类号： H01L29/92
摘要：
In a first aspect, a method of forming a metal-insulator-metal (“MIM”) stack is provided, the method including: (1) forming a dielectric material having an opening and a first conductive carbon layer within the opening; (2) forming a spacer in the opening; (3) forming a carbon-based switching material on a sidewall of the spacer; and (4) forming a second conductive carbon layer above the carbon-based switching material. A ratio of a cross sectional area of the opening in the dielectric material to a cross sectional area of the carbon-based switching material on the sidewall of the spacer is at least 5. Numerous other aspects are provided.
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