Invention Grant
- Patent Title: Detection of the zero crossing of the load current in a semiconductor device
- Patent Title (中): 检测半导体器件中负载电流的过零点
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Application No.: US13249604Application Date: 2011-09-30
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Publication No.: US08471600B2Publication Date: 2013-06-25
- Inventor: Daniel Domes
- Applicant: Daniel Domes
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H03K5/153
- IPC: H03K5/153

Abstract:
A circuit arrangement includes a reverse conducting transistor having a gate electrode and a load current path between an emitter and collector electrode. The transistor is configured to allow for conducting a load current in a forward direction and in a reverse direction through the load current path and activated or deactivated by a respective signal at the gate electrode. The circuit arrangement further includes a gate control unit and a monitoring unit. The gate control unit is connected to the gate electrode and configured to deactivate the transistor or prevent an activation of the transistor via the gate electrode when the transistor is in a reverse conducting state. The monitoring unit is configured to detect a sudden rise of a collector-emitter voltage of the reverse conducting transistor which occurs, when the load current crosses zero, while the transistor is deactivated or activation is prevented by the gate control unit.
Public/Granted literature
- US20130082741A1 Detection of the Zero Crossing of the Load Current in a Semiconductor Device Public/Granted day:2013-04-04
Information query
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