发明授权
- 专利标题： Drive circuit of semiconductor device
- 专利标题（中）： 半导体器件的驱动电路
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申请号： US12760742申请日： 2010-04-15
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公开(公告)号： US08471622B2公开(公告)日： 2013-06-25
- 发明人: Katsumi Ishikawa , Kazutoshi Ogawa , Masahiro Nagasu
- 申请人： Katsumi Ishikawa , Kazutoshi Ogawa , Masahiro Nagasu
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2009-100849 20090417
- 主分类号： H03K17/60
- IPC分类号： H03K17/60
摘要：
The invention provides a switching circuit of a power semiconductor device having connected in parallel SiC diodes with a small recovery current, capable of significantly reducing turn-on loss and recovery loss without increasing the noise in the MHz band, and contributing to reducing the loss and noise of inverters. The present invention provides a switching circuit and an inverter circuit of a power semiconductor device comprising a module combining Si-IGBT and SiC diodes, wherein an on-gate resistance is set smaller than an off-gate resistance.
公开/授权文献
- US20100265746A1 DRIVE CIRCUIT OF SEMICONDUCTOR DEVICE 公开/授权日：2010-10-21
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