-
公开(公告)号：US08471622B2
公开(公告)日：2013-06-25
申请号：US12760742
申请日：2010-04-15
IPC分类号： H03K17/60
CPC分类号： H03K17/08128 , H03K17/127 , H03K17/6877
摘要： The invention provides a switching circuit of a power semiconductor device having connected in parallel SiC diodes with a small recovery current, capable of significantly reducing turn-on loss and recovery loss without increasing the noise in the MHz band, and contributing to reducing the loss and noise of inverters. The present invention provides a switching circuit and an inverter circuit of a power semiconductor device comprising a module combining Si-IGBT and SiC diodes, wherein an on-gate resistance is set smaller than an off-gate resistance.
摘要翻译： 本发明提供了一种功率半导体器件的开关电路，其具有并联的SiC二极管，具有小的恢复电流，能够显着降低导通损耗和恢复损耗，而不增加MHz带内的噪声，并有助于减少损耗， 逆变器噪声。 本发明提供一种功率半导体器件的开关电路和逆变器电路，该功率半导体器件包括组合Si-IGBT和SiC二极管的模块，其中栅极电阻被设定为小于截止栅极电阻。
-
公开(公告)号：US08110944B2
公开(公告)日：2012-02-07
申请号：US12707180
申请日：2010-02-17
申请人： Kazutoshi Ogawa , Katsumi Ishikawa
发明人： Kazutoshi Ogawa , Katsumi Ishikawa
IPC分类号： H02J1/10
CPC分类号： H02M1/08 , Y10T307/50
摘要： The invention provides a switching circuit and a power converter having a built-in power source for a conduction control terminal even if they have a single-arm structure. In the switching circuit having a switching device and a conduction control terminal power source capacitor, a negative terminal of the capacitor is connected to a reference voltage terminal of a main power source and to the gate terminal selectively through a half-bridge circuit and a positive terminal of the capacitor is selectively connected to a positive terminal of the main power source and to a source terminal of the switching device through a half-bridge circuit. The capacitor is charged when the positive terminal is connected to the main power source and discharges when the negative terminal is connected to the gate terminal and the positive terminal is connected to the source terminal and applies voltage to the gate terminal of the switching device.
摘要翻译： 本发明提供了一种开关电路和功率转换器，其具有用于导电控制端子的内置电源，即使它们具有单臂结构。 在具有开关器件和导通控制端子电源电容器的开关电路中，电容器的负极端子通过半桥电路和正极连接到主电源的基准电压端子和栅极端子 电容器的端子通过半桥电路选择性地连接到主电源的正极端子和开关器件的源极端子。 当正极连接到主电源时，电容器被充电，当负极连接到栅极端子并且正极端子连接到源极端子并且向开关装置的栅极端子施加电压时，电容器被充电。
-
公开(公告)号：US08952642B2
公开(公告)日：2015-02-10
申请号：US13806822
申请日：2011-06-23
IPC分类号： H02P29/00 , H02M1/32 , H02P21/06 , H02M7/5387
CPC分类号： H02P29/0088 , H02M1/32 , H02M7/5387 , H02M2001/327 , H02P21/06 , H02P29/68
摘要： Temperature rise in semiconductor switching element that is part of a power conversion device is estimated to assess the degradation and remaining lifetime of the switching element. This is accomplished with a heat generation amount calculation unit in a calculation processor, where current command values Id* and Iq* and voltage command values vu*, vv* and vw* are used to calculate a chip loss. Current values iu*, iv* and iw* of all output phases are estimated from the current command values. The ON/OFF loss of the chip is represented by a function of an estimated value for a current flowing in each output phase, and the loss can be derived by integration with a PWM carrier frequency f. With respect to a conduction loss, a conduction time is integrated with the estimated current value and a saturation voltage, which is a function of the estimated current value.
摘要翻译： 作为功率转换装置的一部分的半导体开关元件的温度上升被估计为评估开关元件的劣化和剩余寿命。 这是通过计算处理器中的发热量计算单元实现的，其中使用电流指令值Id *和Iq *以及电压指令值vu *，vv *和vw *来计算芯片损耗。 从当前命令值估计所有输出相位的当前值iu *，iv *和iw *。 芯片的ON / OFF损耗由在每个输出相中流动的电流的估计值的函数表示，并且可以通过与PWM载波频率f的积分来导出损耗。 对于导通损耗，导通时间与估计电流值和作为估计电流值的函数的饱和电压进行积分。
-
公开(公告)号：US20130119912A1
公开(公告)日：2013-05-16
申请号：US13806822
申请日：2011-06-23
IPC分类号： H02P29/00
CPC分类号： H02P29/0088 , H02M1/32 , H02M7/5387 , H02M2001/327 , H02P21/06 , H02P29/68
摘要： A temperature rise of a semiconductor switching element, which is part of a power conversion device such as an inverter, is estimated by an extremely simple method to assess the degradation and remaining lifetime of the semiconductor switching element.In a heat generation amount calculation unit 12 in a calculation processor 3, current command values Id* and Iq* and voltage command values vu*, vv* and vw* are used to calculate a chip loss. First, current values iu*, iv* and iw* of all output phases are estimated from the current command values. The ON/OFF loss of the chip is represented by a function of an estimated value for a current flowing in each output phase, and the loss can be derived by integration with a PWM carrier frequency f. In addition, with respect to a conduction loss, it is necessary to integrate a conduction time with the estimated current value and a saturation voltage, which is a function of the estimated current value. In this case, the conduction time is calculated from a relationship between a carrier amplitude and the voltage command value in each control cycle fsw of the switching element. In addition, an ambient temperature sensor is added to calculate an absolute temperature.
摘要翻译： 作为逆变器等功率转换装置的一部分的半导体开关元件的温度上升通过非常简单的方法来估计半导体开关元件的劣化和剩余寿命来估计。 在计算处理器3中的发热量计算单元12中，使用电流指令值Id *和Iq *以及电压指令值vu *，vv *和vw *来计算芯片损耗。 首先，从当前命令值估计所有输出相位的当前值iu *，iv *和iw *。 芯片的ON / OFF损耗由在每个输出相中流动的电流的估计值的函数表示，并且可以通过与PWM载波频率f的积分来导出损耗。 此外，对于导通损耗，需要将导通时间与估计电流值和作为估计电流值的函数的饱和电压进行积分。 在这种情况下，根据开关元件的各控制周期fsw中的载波幅度与电压指令值之间的关系来计算导通时间。 另外，添加环境温度传感器来计算绝对温度。
-
公开(公告)号：US20100244092A1
公开(公告)日：2010-09-30
申请号：US12707909
申请日：2010-02-18
申请人： Katsumi ISHIKAWA , Kazutoshi Ogawa
发明人： Katsumi ISHIKAWA , Kazutoshi Ogawa
IPC分类号： H01L27/06
CPC分类号： H01L25/18 , H01L25/072 , H01L25/115 , H01L27/06 , H01L29/16 , H01L29/1608 , H01L29/2003 , H01L29/7393 , H01L29/872 , H01L2224/48111 , H01L2224/48137 , H01L2224/48227 , H01L2224/49111 , H01L2224/49113 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/30107 , H01L2924/00
摘要： A power semiconductor apparatus which is provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, and includes a first insulated metal substrate on which the first power semiconductor device is mounted, a first heat dissipation metal base on which the first insulated metal substrate is mounted, a second insulated metal substrate on which the second power semiconductor device is mounted, and a second heat dissipation metal base on which the second insulated metal substrate is mounted.
摘要翻译： 一种功率半导体装置，其具备使用Si作为基体的第一功率半导体器件和使用具有比Si的能带隙宽的能量带隙作为基体的半导体的第二功率半导体器件，并且包括第一绝缘金属 其上安装有第一功率半导体器件的基板，安装有第一绝缘金属基板的第一散热金属基座，安装有第二功率半导体器件的第二绝缘金属基板和第二绝热金属基座， 其中安装有第二绝缘金属基板。
-
公开(公告)号：US08829838B2
公开(公告)日：2014-09-09
申请号：US13580281
申请日：2010-03-10
CPC分类号： B60L3/003 , B60L3/12 , B60L7/14 , B60L7/26 , B60L11/1857 , B60L15/2009 , B60L2240/36 , B60L2240/421 , B60L2240/423 , B60L2250/16 , H01L2224/32225 , H01L2224/48091 , H01L2224/48137 , H01L2224/48227 , H01L2224/73265 , H02P27/06 , H02P29/68 , Y02T10/642 , Y02T10/644 , Y02T10/645 , Y02T10/70 , Y02T10/7005 , Y02T10/705 , Y02T10/72 , Y02T10/7275 , H01L2924/00014 , H01L2924/00
摘要： The present invention provides a power converter which, while ensuring safety, implements control for the flow of a constant current in a specified switching element, more accurately determines the lifetime of a switching element, and reduces the number of temperature detectors. The power converter is provided with a mechanism which causes a brake device to operate or which confirms that a brake mechanism is operating. The power converter supplies current to the d-axis and the q-axis of a rotational coordinate system, within the range of the braking torque of the brake mechanism, and passes the desired current to the desired element. Furthermore, temperature detectors are attached only in chips in sections where a crack readily develops in the upper solder layer or peeling is readily generated in the wire bonding, and in chips where a crack readily develops in the lower solder layer.
摘要翻译： 本发明提供了一种功率转换器，其在确保安全性的同时对特定的开关元件中的恒定电流的流动进行控制，更精确地确定开关元件的寿命，并且减少了温度检测器的数量。 功率转换器设置有使制动装置工作或确认制动机构工作的机构。 功率转换器在制动机构的制动转矩的范围内向d轴和旋转坐标系的q轴提供电流，并将期望的电流传递到期望的元件。 此外，温度检测器仅在芯片中附着在上焊接层容易发生裂纹的部分中，或者在引线接合中容易产生剥离，并且在下焊料层中容易产生裂纹的芯片中。
-
公开(公告)号：US08619448B2
公开(公告)日：2013-12-31
申请号：US13176776
申请日：2011-07-06
申请人： Kazutoshi Ogawa , Katsumi Ishikawa
发明人： Kazutoshi Ogawa , Katsumi Ishikawa
IPC分类号： H02M7/5387
CPC分类号： H02M7/5387 , H02M7/003 , Y02B70/1441
摘要： In order to reduce the average power of the ringing noise, the present invention provides a power converter comprising: an arm circuit including a high-voltage side switching device to which a first diode is connected in parallel and a low-voltage side switching device to which a second diode is connected in parallel; and a main power supply connected to a series circuit of the high-voltage side switching device and the low-voltage side switching device, wherein a connecting point between the high-voltage side switching device and the low-voltage side switching device is connected to a load, and a resonant frequency calculated from inductances of wirings of a closed circuit including the first diode, the second diode, and the main power supply and a capacitance across the first diode is different form that calculated from the inductances of the wirings and a capacitance across the second diode.
摘要翻译： 为了降低振铃噪声的平均功率，本发明提供了一种功率变换器，包括：臂电路，包括并联连接有第一二极管的高压侧开关装置和低压侧开关装置， 第二二极管并联连接; 以及连接到高压侧开关装置和低压侧开关装置的串联电路的主电源，其中高压侧开关装置和低压侧开关装置之间的连接点连接到 负载和由包括第一二极管，第二二极管和主电源的闭合电路的电感的电感计算出的谐振频率以及跨第一二极管的电容的不同形式，其从布线的电感和 电容跨越第二个二极管。
-
公开(公告)号：US08395422B2
公开(公告)日：2013-03-12
申请号：US12893356
申请日：2010-09-29
申请人： Kazutoshi Ogawa , Katsumi Ishikawa
发明人： Kazutoshi Ogawa , Katsumi Ishikawa
CPC分类号： H03K17/04123 , H01L2224/48091 , H01L2224/48247 , H01L2224/4903 , H01L2224/49113 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H03K17/063 , H03K17/08122 , H01L2924/00014 , H01L2924/00
摘要： The threshold value for a normally-off junction FET is a low value. Accordingly, in a semiconductor driver circuit using the normally-off junction FET, there have existed such problems as high-accuracy voltage control, high-speed charging into an input capacitor, and misoperations. A semiconductor driver circuit which is the most suitable for the normally-off junction FET is proposed by applying the high-accuracy gate-voltage generation scheme based on a Zener diode, a reduction in the turn-on loss based on a speed-up capacitor, the connection of an inter-gate-source capacitor, and a misoperation-preventing circuit based on the source-terminal optimum implementation scheme.
摘要翻译： 常闭结FET的阈值为低值。 因此，在使用常关结型FET的半导体驱动电路中，存在高精度电压控制，输入电容器的高速充电以及误动作等问题。 通过施加基于齐纳二极管的高精度栅极电压生成方案，基于加速电容器的导通损耗降低，提出了最适合于常闭结FET的半导体驱动电路 ，栅极间电容器的连接以及基于源极端子最优实施方案的防误操作电路。
-
公开(公告)号：US20110080192A1
公开(公告)日：2011-04-07
申请号：US12893356
申请日：2010-09-29
申请人： Kazutoshi Ogawa , Katsumi Ishikawa
发明人： Kazutoshi Ogawa , Katsumi Ishikawa
IPC分类号： H03K3/00
CPC分类号： H03K17/04123 , H01L2224/48091 , H01L2224/48247 , H01L2224/4903 , H01L2224/49113 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H03K17/063 , H03K17/08122 , H01L2924/00014 , H01L2924/00
摘要： The threshold value for a normally-off junction FET is a low value. Accordingly, in a semiconductor driver circuit using the normally-off junction FET, there have existed such problems as high-accuracy voltage control, high-speed charging into an input capacitor, and misoperations. A semiconductor driver circuit which is the most suitable for the normally-off junction FET is proposed by applying the high-accuracy gate-voltage generation scheme based on a Zener diode, a reduction in the turn-on loss based on a speed-up capacitor, the connection of an inter-gate-source capacitor, and a misoperation-preventing circuit based on the source-terminal optimum implementation scheme.
摘要翻译： 常闭结FET的阈值为低值。 因此，在使用常关结型FET的半导体驱动电路中，存在高精度电压控制，输入电容器的高速充电以及误动作等问题。 通过施加基于齐纳二极管的高精度栅极电压生成方案，基于加速电容器的导通损耗降低，提出了最适合于常闭结FET的半导体驱动电路 ，栅极间电容器的连接以及基于源极端子最优实施方案的防误操作电路。
-
10.发明授权Power semiconductor apparatus having a silicon power semiconductor device and a wide gap semiconductor device 有权具有硅功率半导体器件和宽间隙半导体器件的功率半导体器件公开(公告)号：US08441075B2
公开(公告)日：2013-05-14
申请号：US12707909
申请日：2010-02-18
申请人： Katsumi Ishikawa , Kazutoshi Ogawa
发明人： Katsumi Ishikawa , Kazutoshi Ogawa
IPC分类号： H01L27/06
CPC分类号： H01L25/18 , H01L25/072 , H01L25/115 , H01L27/06 , H01L29/16 , H01L29/1608 , H01L29/2003 , H01L29/7393 , H01L29/872 , H01L2224/48111 , H01L2224/48137 , H01L2224/48227 , H01L2224/49111 , H01L2224/49113 , H01L2924/12032 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13091 , H01L2924/30107 , H01L2924/00
摘要： A power semiconductor apparatus which is provided with a first power semiconductor device using Si as a base substance and a second power semiconductor device using a semiconductor having an energy bandgap wider than the energy bandgap of Si as a base substance, and includes a first insulated metal substrate on which the first power semiconductor device is mounted, a first heat dissipation metal base on which the first insulated metal substrate is mounted, a second insulated metal substrate on which the second power semiconductor device is mounted, and a second heat dissipation metal base on which the second insulated metal substrate is mounted.
摘要翻译： 一种功率半导体装置，其具备使用Si作为基体的第一功率半导体器件和使用具有比Si的能带隙宽的能量带隙作为基体的半导体的第二功率半导体器件，并且包括第一绝缘金属 其上安装有第一功率半导体器件的基板，安装有第一绝缘金属基板的第一散热金属基座，安装有第二功率半导体器件的第二绝缘金属基板和第二绝热金属基座， 其中安装有第二绝缘金属基板。
-
-
-
-
-
-
-
-
-
搜索结果
12 条记录 (耗时 0.018 秒)
