Invention Grant
US08472100B2 Multilayered deformable element with reduced memory properties in a MEMS device
有权
在MEMS器件中具有减小的记忆特性的多层可变形元件
- Patent Title: Multilayered deformable element with reduced memory properties in a MEMS device
- Patent Title (中): 在MEMS器件中具有减小的记忆特性的多层可变形元件
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Application No.: US12046598Application Date: 2008-03-12
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Publication No.: US08472100B2Publication Date: 2013-06-25
- Inventor: Patrick Ian Oden , Larry Joseph Hornbeck , Simon Joshua Jacobs
- Applicant: Patrick Ian Oden , Larry Joseph Hornbeck , Simon Joshua Jacobs
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: G02B26/08
- IPC: G02B26/08
Abstract:
A deformable element for use in microelectromechanical systems comprises a core layer and a protective layer. The protective layer is capable of deterring combinations of undesired chemical components in operational environments with the core layer of the deformable element.
Public/Granted literature
- US20090231673A1 MULTILAYERED DEFORMABLE ELEMENT WITH REDUCED MEMORY PROPERTIES IN A MEMS DEVICE Public/Granted day:2009-09-17
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