Invention Grant
- Patent Title: Spin torque transfer memory cell structures and methods
- Patent Title (中): 旋转转矩记忆单元结构和方法
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Application No.: US13652957Application Date: 2012-10-16
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Publication No.: US08472244B2Publication Date: 2013-06-25
- Inventor: Stephen J. Kramer , Gurtej S. Sandhu
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C11/15
- IPC: G11C11/15
Abstract:
Spin Torque Transfer (STT) memory cell structures and methods are described herein. One or more STT memory cell structures include a tunneling barrier material positioned between a ferromagnetic storage material and a pinned ferromagnetic material in contact with an antiferromagnetic material. The tunneling barrier material is a multiferroic material and the antiferromagnetic material, the ferromagnetic storage material, and the pinned ferromagnetic material are positioned between a first electrode and a second electrode.
Public/Granted literature
- US20130077378A1 SPIN TORQUE TRANSFER MEMORY CELL STRUCTURES AND METHODS Public/Granted day:2013-03-28
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