中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

32 records (took 0.021 seconds)

    Wafer registration and overlay measurement systems and related methods
    1.
    发明授权
    Wafer registration and overlay measurement systems and related methods 有权

    公开(公告)号：US12230546B2

    公开(公告)日：2025-02-18

    申请号：US17644414

    申请日：2021-12-15

    Applicant: Micron Technology, Inc.

    Inventor： Nikolay A. Mirin ,  Robert Dembi ,  Richard T. Housley ,  Xiaosong Zhang ,  Jonathan D. Harms ,  Stephen J. Kramer

    IPC: H01L21/66 ,  G03F7/00 ,  H01L21/302 ,  H01L21/68 ,  H01L23/544

    Abstract: A method for measuring overlay between an interest level and a reference level of a wafer includes applying a magnetic field to a wafer, detecting at least one residual magnetic field emitted from at least one registration marker of a first set of registration markers within the wafer, responsive to the detected one or more residual magnetic fields, determining a location of the at least one registration marker of the first set registration markers, determining a location of at least one registration marker of a second set of registration markers, and responsive to the respective determined locations of the at least one registration marker of the first set of registration markers and the at least one registration marker of the second set of registration markers, calculating a positional offset between an interest level of the wafer and a reference level of the wafer. Related methods and systems are also disclosed.

    WAFER REGISTRATION AND OVERLAY MEASUREMENT SYSTEMS AND RELATED METHODS
    3.
    发明申请
    WAFER REGISTRATION AND OVERLAY MEASUREMENT SYSTEMS AND RELATED METHODS 审中-公开

    公开(公告)号：US20200075432A1

    公开(公告)日：2020-03-05

    申请号：US16122106

    申请日：2018-09-05

    Applicant: Micron Technology, Inc.

    Inventor： Nikolay A. Mirin ,  Robert Dembi ,  Richard T. Housley ,  Xiaosong Zhang ,  Jonathan D. Harms ,  Stephen J. Kramer

    IPC: H01L21/66 ,  H01L23/544 ,  H01L21/68 ,  H01L21/302

    Abstract: A method for measuring overlay between an interest level and a reference level of a wafer includes applying a magnetic field to a wafer, detecting at least one residual magnetic field emitted from at least one registration marker of a first set of registration markers within the wafer, responsive to the detected one or more residual magnetic fields, determining a location of the at least one registration marker of the first set registration markers, determining a location of at least one registration marker of a second set of registration markers, and responsive to the respective determined locations of the at least one registration marker of the first set of registration markers and the at least one registration marker of the second set of registration markers, calculating a positional offset between an interest level of the wafer and a reference level of the wafer. Related methods and systems are also disclosed.

    Wafer registration and overlay measurement systems and related methods
    4.
    发明授权
    Wafer registration and overlay measurement systems and related methods 有权

    公开(公告)号：US11251096B2

    公开(公告)日：2022-02-15

    申请号：US16122106

    申请日：2018-09-05

    Applicant: Micron Technology, Inc.

    Inventor： Nikolay A. Mirin ,  Robert Dembi ,  Richard T. Housley ,  Xiaosong Zhang ,  Jonathan D. Harms ,  Stephen J. Kramer

    IPC: G03F7/20 ,  H01L21/68 ,  H01L21/66 ,  H01L23/544 ,  H01L21/302

    Abstract: A method for measuring overlay between an interest level and a reference level of a wafer includes applying a magnetic field to a wafer, detecting at least one residual magnetic field emitted from at least one registration marker of a first set of registration markers within the wafer, responsive to the detected one or more residual magnetic fields, determining a location of the at least one registration marker of the first set registration markers, determining a location of at least one registration marker of a second set of registration markers, and responsive to the respective determined locations of the at least one registration marker of the first set of registration markers and the at least one registration marker of the second set of registration markers, calculating a positional offset between an interest level of the wafer and a reference level of the wafer. Related methods and systems are also disclosed.

    Magnetic structures, semiconductor structures, and semiconductor devices
    5.
    发明授权
    Magnetic structures, semiconductor structures, and semiconductor devices 有权

    公开(公告)号：US10121824B2

    公开(公告)日：2018-11-06

    申请号：US15642577

    申请日：2017-07-06

    Applicant: Micron Technology, Inc.

    Inventor： Wayne I. Kinney ,  Witold Kula ,  Stephen J. Kramer

    IPC: H01L27/22 ,  G11C11/16 ,  H01F10/32 ,  H01L43/02 ,  H01L45/00 ,  H01L43/08 ,  H01L43/10

    Abstract: Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random-access memory (STT-MRAM) systems, and methods of fabrication.

    METHODS OF INCREASING THE SOLUBILITY OF MATERIALS IN SUPERCRITICAL CARBON DIOXIDE
    7.
    发明申请
    METHODS OF INCREASING THE SOLUBILITY OF MATERIALS IN SUPERCRITICAL CARBON DIOXIDE 有权
    提高超临界二氧化碳材料溶解性的方法

    公开(公告)号：US20150096468A1

    公开(公告)日：2015-04-09

    申请号：US14571525

    申请日：2014-12-16

    Applicant: Micron Technology, Inc. ,  Idaho Research Foundation

    Inventor： Chien M. Wai ,  Hiroyuki Ohde ,  Stephen J. Kramer

    IPC: C09D1/00 ,  C23C16/22

    CPC classification number: C09D1/00 ,  B01D11/0203 ,  B01D11/0407 ,  B01D15/40 ,  C07C2604/00 ,  C23C16/22 ,  C23C18/00 ,  C23C18/1208 ,  C23C18/122 ,  H01L21/02101 ,  H01L21/02115 ,  H01L21/02123 ,  H01L21/02175 ,  H01L21/02282 ,  H01L21/316 ,  Y02P20/544

    Abstract: Methods of increasing the solubility of a base in supercritical carbon dioxide include forming a complex of a Lewis acid and the base, and dissolving the complex in supercritical carbon dioxide. The Lewis acid is soluble in supercritical carbon dioxide, and the base is substantially insoluble in supercritical carbon dioxide. Methods for increasing the solubility of water in supercritical carbon dioxide include dissolving an acid or a base in supercritical carbon dioxide to form a solution and dissolving water in the solution. The acid or the base is formulated to interact with water to solubilize the water in the supercritical carbon dioxide. Some compositions include supercritical carbon dioxide, a hydrolysable metallic compound, and at least one of an acid and a base. Some compositions include an alkoxide and at least one of an acid and a base.

    Abstract translation: 提高碱在超临界二氧化碳中的溶解度的方法包括形成路易斯酸和碱的配合物，并将络合物溶解在超临界二氧化碳中。 路易斯酸可溶于超临界二氧化碳，碱基基本上不溶于超临界二氧化碳。 提高水在超临界二氧化碳中的溶解度的方法包括将酸或碱溶解在超临界二氧化碳中以形成溶液并将水溶解在溶液中。 将酸或碱配制成与水相互作用以溶解超临界二氧化碳中的水。 一些组合物包括超临界二氧化碳，可水解的金属化合物和至少一种酸和碱。 一些组合物包括醇盐和酸和碱中的至少一种。

    Magnetic memory cells and methods of formation
    10.
    发明授权
    Magnetic memory cells and methods of formation 有权
    磁记忆细胞和形成方法

    公开(公告)号：US09406874B2

    公开(公告)日：2016-08-02

    申请号：US14582826

    申请日：2014-12-24

    Applicant: Micron Technology, Inc.

    Inventor： Witold Kula ,  Gurtej S. Sandhu ,  Stephen J. Kramer

    IPC: H01L43/12 ,  H01L43/02 ,  H01L27/22 ,  H01L43/08

    CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/12

    Abstract: Methods of forming magnetic memory cells are disclosed. Magnetic and non-magnetic materials are formed into a primal precursor structure in an initial stress state of essentially no strain, compressive strain, or tensile strain. A stress-compensating material, e.g., a non-sacrificial, conductive material, is formed to be disposed on the primal precursor structure to form a stress-compensated precursor structure in a net beneficial stress state. Thereafter, the stress-compensated precursor structure may be patterned to form a cell core of a memory cell. The net beneficial stress state of the stress-compensated precursor structure lends to formation of one or more magnetic regions, in the cell core, exhibiting a vertical magnetic orientation without deteriorating a magnetic strength of the one or more magnetic regions. Also disclosed are memory cells, memory cell structures, semiconductor device structures, and spin torque transfer magnetic random access memory (STT-MRAM) systems.

    Abstract translation: 公开了形成磁存储器单元的方法。 磁性和非磁性材料在基本上没有应变，压缩应变或拉伸应变的初始应力状态下形成原始前体结构。 形成应力补偿材料，例如非牺牲导电材料，以设置在原始前体结构上以在净有益应力状态下形成应力补偿前体结构。 此后，应力补偿前体结构可以被图案化以形成存储单元的单元芯。 应力补偿前体结构的净有益应力状态有助于在电池芯中形成一个或多个磁性区域，呈现垂直磁性取向而不会使一个或多个磁性区域的磁强度恶化。 还公开了存储器单元，存储单元结构，半导体器件结构和自旋转矩传递磁随机存取存储器（STT-MRAM）系统。

Patent Agency Ranking