发明授权
- 专利标题: Method for enhancing thermal stability, improving biasing and reducing damage from electrostatic discharge in self-pinned abutted junction heads
- 专利标题(中): 提高热稳定性,改善偏压和减少自固定邻接接头中静电放电损伤的方法
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申请号: US11494241申请日: 2006-07-27
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公开(公告)号: US08474127B2公开(公告)日: 2013-07-02
- 发明人: Hardayal Singh Gill , Wen-Chien Hsiao , Jih-Shiuan Luo
- 申请人: Hardayal Singh Gill , Wen-Chien Hsiao , Jih-Shiuan Luo
- 申请人地址: NL Amsterdam
- 专利权人: HGST Netherlands B.V.
- 当前专利权人: HGST Netherlands B.V.
- 当前专利权人地址: NL Amsterdam
- 代理机构: Merchant & Gould P.C.
- 主分类号: G11B5/127
- IPC分类号: G11B5/127 ; H04R31/00
摘要:
A method for enhancing thermal stability, improving biasing and reducing damage from electrical surges in self-pinned abutted junction heads. The method includes forming a free layer, forming first hard bias layers abutting the free layer and forming second hard bias layers over the first hard bias layers discontiguous from the free layer, the second hard bias layers being anti-parallel to the first hard bias layers, the first and second hard bias layers providing a net longitudinal bias on the free layer.
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