发明授权
US08474403B2 Apparatus for forming thin film and method of manufacturing semiconductor film
有权
用于形成薄膜的装置和制造半导体膜的方法
- 专利标题: Apparatus for forming thin film and method of manufacturing semiconductor film
- 专利标题(中): 用于形成薄膜的装置和制造半导体膜的方法
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申请号: US13237001申请日: 2011-09-20
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公开(公告)号: US08474403B2公开(公告)日: 2013-07-02
- 发明人: Mutsumi Tsuda , Masakazu Taki
- 申请人: Mutsumi Tsuda , Masakazu Taki
- 申请人地址: JP Tokyo
- 专利权人: Mitsubishi Electric Corporation
- 当前专利权人: Mitsubishi Electric Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2008-137281 20080526
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
An apparatus including a vacuum chamber having a substrate holding unit that holds a substrate and a plasma electrode facing the substrate, a first gas supply unit that supplies a H2 gas to the vacuum chamber at a constant flow rate, a second gas supply unit that opens or closes a valve to turn on or off the supply of a SiH4 gas, a high-frequency power source that applies a high frequency voltage to the plasma electrode, a shield box that is connected to a ground so as to surround the plasma electrode outside the vacuum chamber, and a control unit that controls the valve such that the SiH4 gas is periodically supplied to the vacuum chamber and modulates the amplitude of high frequency power in synchronization with the opening or closing of the valve, and the valve is provided in the shield box.
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