发明授权
US08476140B2 High-performance diode device structure and materials used for the same
有权
高性能二极管器件的结构和材料使用相同
- 专利标题： High-performance diode device structure and materials used for the same
- 专利标题（中）： 高性能二极管器件的结构和材料使用相同
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申请号： US13352833申请日： 2012-01-18
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公开(公告)号： US08476140B2公开(公告)日： 2013-07-02
- 发明人: Gurtej Sandhu , Bhaskar Srinivasan
- 申请人： Gurtej Sandhu , Bhaskar Srinivasan
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： Dickstein Shapiro LLP
- 主分类号： H01L21/8222
- IPC分类号： H01L21/8222 ; H01L21/20
摘要：
A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
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