Invention Grant
US08476140B2 High-performance diode device structure and materials used for the same
有权
高性能二极管器件的结构和材料使用相同
- Patent Title: High-performance diode device structure and materials used for the same
- Patent Title (中): 高性能二极管器件的结构和材料使用相同
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Application No.: US13352833Application Date: 2012-01-18
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Publication No.: US08476140B2Publication Date: 2013-07-02
- Inventor: Gurtej Sandhu , Bhaskar Srinivasan
- Applicant: Gurtej Sandhu , Bhaskar Srinivasan
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L21/8222
- IPC: H01L21/8222 ; H01L21/20
Abstract:
A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
Public/Granted literature
- US20120112185A1 HIGH-PERFORMANCE DIODE DEVICE STRUCTURE AND MATERIALS USED FOR THE SAME Public/Granted day:2012-05-10
Information query
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