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US08476467B2 Organometallic precursors for use in chemical phase deposition processes 有权
用于化学相沉积工艺的有机金属前体

Organometallic precursors for use in chemical phase deposition processes
Abstract:
An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R)nM(CO)2(X)  (Formula I) wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).
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