Invention Grant
- Patent Title: Organometallic precursors for use in chemical phase deposition processes
- Patent Title (中): 用于化学相沉积工艺的有机金属前体
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Application No.: US12670022Application Date: 2008-07-24
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Publication No.: US08476467B2Publication Date: 2013-07-02
- Inventor: Ravi Kanjolia , Rajesh Odedra , Neil Boag
- Applicant: Ravi Kanjolia , Rajesh Odedra , Neil Boag
- Applicant Address: US MO St. Louis
- Assignee: Sigma-Aldrich Co. LLC
- Current Assignee: Sigma-Aldrich Co. LLC
- Current Assignee Address: US MO St. Louis
- Agency: Harness, Dickey & Pierce, P.L.C.
- International Application: PCT/US2008/071014 WO 20080724
- International Announcement: WO2009/015270 WO 20090129
- Main IPC: C07F17/02
- IPC: C07F17/02

Abstract:
An organometallic precursor is provided. The precursor corresponds in structure to Formula I: Cp(R)nM(CO)2(X) (Formula I) wherein: M is Ru, Fe or Os; R is C1-C10-alkyl; X is C1-C10-alkyl; and n is 1, 2, 3, 4 or 5. The precursors are useful in chemical phase deposition processes, such as atomic layer deposition (ALD) and chemical vapor deposition (CVD).
Public/Granted literature
- US20100256406A1 ORGANOMETALLIC PRECURSORS FOR USE IN CHEMICAL PHASE DEPOSITION PROCESSES Public/Granted day:2010-10-07
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