发明授权
- 专利标题： Silicon-germanium, quantum-well, light-emitting diode
- 专利标题（中）： 硅锗，量子阱，发光二极管
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申请号： US13259455申请日： 2009-09-25
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公开(公告)号： US08476647B2公开(公告)日： 2013-07-02
- 发明人: Alexandre M. Bratkovski , Viatcheslav Osipov
- 申请人： Alexandre M. Bratkovski , Viatcheslav Osipov
- 申请人地址： US TX Houston
- 专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人： Hewlett-Packard Development Company, L.P.
- 当前专利权人地址： US TX Houston
- 国际申请： PCT/US2009/058373 WO 20090925
- 国际公布： WO2011/037574 WO 20110331
- 主分类号： H01L27/15
- IPC分类号： H01L27/15 ; H01L29/18 ; H01L31/12 ; H01L33/00
摘要：
A silicon-germanium, quantum-well, light-emitting diode. The light-emitting diode includes a p-doped portion, a quantum-well portion, and an p-doped portion. The quantum-well portion is disposed between the p-doped portion and the n-doped portion. The quantum-well portion includes a carrier confinement region that is configured to facilitate luminescence with emission of light produced by direct recombination with a hole confined within the carrier confinement region. The p-doped portion includes a first alloy of silicon-germanium, and the n-doped portion includes a second alloy of silicon-germanium.
公开/授权文献
- US20120175586A1 SILICON-GERMANIUM, QUANTUM-WELL, LIGHT-EMITTING DIODE 公开/授权日：2012-07-12
信息查询
IPC分类:
