发明授权
- 专利标题： Semiconductor device and method of manufacturing the semiconductor device
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US12770069申请日： 2010-04-29
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公开(公告)号： US08476726B2公开(公告)日： 2013-07-02
- 发明人: Satoshi Shirahama
- 申请人： Satoshi Shirahama
- 申请人地址： JP Anan-shi
- 专利权人： Nichia Corporation
- 当前专利权人： Nichia Corporation
- 当前专利权人地址： JP Anan-shi
- 代理机构： Birch, Stewart, Kolasch & Birch, LLP.
- 优先权： JPP2009-110785 20090430; JPP2010-085124 20100401
- 主分类号： H01L31/0203
- IPC分类号： H01L31/0203 ; H01L23/48
摘要：
Provided is a semiconductor device and a method of manufacturing the semiconductor device, in which the semiconductor device has a semiconductor element having a plurality of wires bonded to the semiconductor element with sufficient bonding reliability and has a good heat dissipation property. A semiconductor device in which a first wire is ball bonded on an electrode, and a second wire is further bonded on the ball-bonded first wire, and the first wire or an end of the second wire defines a space between itself and the ball portion of the first wire.
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