发明授权
- 专利标题： Electrical connection structure
- 专利标题（中）： 电气连接结构
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申请号： US13308249申请日： 2011-11-30
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公开(公告)号： US08476759B2公开(公告)日： 2013-07-02
- 发明人: Yao-Chun Chuang , Chang-Chia Huang , Tsung-Shu Lin , Chen-Cheng Kuo , Chen-Shien Chen
- 申请人： Yao-Chun Chuang , Chang-Chia Huang , Tsung-Shu Lin , Chen-Cheng Kuo , Chen-Shien Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48
摘要：
A structure comprises a top metal connector formed underneath a bond pad. The bond pad is enclosed by a first passivation layer and a second passivation layer. A polymer layer is further formed on the second passivation layer. The dimension of an opening in the first passivation layer is less than the dimension of the top metal connector. The dimension of the top metal connector is less than the dimensions of an opening in the second passivation layer and an opening in the polymer layer.
公开/授权文献
- US20130134563A1 Electrical Connection Structure 公开/授权日：2013-05-30