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公开(公告)号：US08476759B2
公开(公告)日：2013-07-02
申请号：US13308249
申请日：2011-11-30
IPC分类号： H01L23/48
CPC分类号： H01L24/11 , H01L23/293 , H01L23/3192 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/03462 , H01L2224/0401 , H01L2224/05005 , H01L2224/05022 , H01L2224/05086 , H01L2224/05091 , H01L2224/05124 , H01L2224/05541 , H01L2224/05572 , H01L2224/1145 , H01L2224/11462 , H01L2224/13022 , H01L2224/13111 , H01L2224/13147 , H01L2924/00014 , H01L2924/206 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2224/05552
摘要： A structure comprises a top metal connector formed underneath a bond pad. The bond pad is enclosed by a first passivation layer and a second passivation layer. A polymer layer is further formed on the second passivation layer. The dimension of an opening in the first passivation layer is less than the dimension of the top metal connector. The dimension of the top metal connector is less than the dimensions of an opening in the second passivation layer and an opening in the polymer layer.
摘要翻译： 结构包括形成在接合焊盘下方的顶部金属连接器。 接合焊盘由第一钝化层和第二钝化层包围。 聚合物层进一步形成在第二钝化层上。 第一钝化层中的开口的尺寸小于顶部金属连接器的尺寸。 顶部金属连接器的尺寸小于第二钝化层中的开口的尺寸和聚合物层中的开口的尺寸。
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公开(公告)号：US08241963B2
公开(公告)日：2012-08-14
申请号：US12835189
申请日：2010-07-13
申请人： Wen-Wei Shen , Yao-Chun Chuang , Chen-Shien Chen , Ming-Fa Chen
发明人： Wen-Wei Shen , Yao-Chun Chuang , Chen-Shien Chen , Ming-Fa Chen
IPC分类号： H01L21/00
CPC分类号： H01L24/13 , H01L23/3114 , H01L23/3192 , H01L23/49816 , H01L24/03 , H01L24/05 , H01L24/11 , H01L24/16 , H01L24/81 , H01L2224/023 , H01L2224/0239 , H01L2224/0345 , H01L2224/03462 , H01L2224/0401 , H01L2224/05008 , H01L2224/05022 , H01L2224/05073 , H01L2224/05083 , H01L2224/05124 , H01L2224/05139 , H01L2224/05147 , H01L2224/05166 , H01L2224/05184 , H01L2224/05582 , H01L2224/05647 , H01L2224/05666 , H01L2224/05681 , H01L2224/10126 , H01L2224/10156 , H01L2224/1145 , H01L2224/11452 , H01L2224/11462 , H01L2224/11474 , H01L2224/11849 , H01L2224/11903 , H01L2224/1308 , H01L2224/13099 , H01L2224/13111 , H01L2224/13116 , H01L2224/13564 , H01L2224/13566 , H01L2224/1357 , H01L2224/13582 , H01L2224/13583 , H01L2224/13639 , H01L2224/13644 , H01L2224/13647 , H01L2224/13669 , H01L2224/13684 , H01L2224/16148 , H01L2224/81193 , H01L2224/81898 , H01L2225/06513 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15788 , H01L2924/01007 , H01L2224/13655 , H01L2224/13664 , H01L2924/00
摘要： A bump structure that may be used to interconnect one substrate to another substrate is provided. A recessed conductive pillar is formed on a first substrate such that the recessed conductive pillar has a recess formed therein. The recess may be filled with a solder material. A conductive pillar on a second substrate may be formed having a contact surface with a width less than or equal to a width of the recess. The first substrate may be attached to the second substrate such that the conductive pillar on the second substrate is positioned over or in the recess of the first substrate. The substrates may each be an integrated circuit die, an interposer, a printed circuit board, a high-density interconnect, or the like.
摘要翻译： 提供了可用于将一个衬底互连到另一衬底的凸块结构。 凹陷的导电柱形成在第一基板上，使得凹入的导电柱具有形成在其中的凹部。 凹部可以填充有焊料材料。 第二基板上的导电柱可以形成为具有宽度小于或等于凹部宽度的接触表面。 第一衬底可以附接到第二衬底，使得第二衬底上的导电柱位于第一衬底的凹部中或其中。 基板可以各自为集成电路管芯，插入件，印刷电路板，高密度互连等。
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公开(公告)号：US20110101519A1
公开(公告)日：2011-05-05
申请号：US12842304
申请日：2010-07-23
IPC分类号： H01L23/498
CPC分类号： H01L23/49827 , H01L23/49816 , H01L24/11 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05022 , H01L2224/05073 , H01L2224/05075 , H01L2224/05139 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05184 , H01L2224/05571 , H01L2224/05572 , H01L2224/05582 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/1146 , H01L2224/1147 , H01L2224/13022 , H01L2224/13083 , H01L2224/131 , H01L2224/13111 , H01L2224/13116 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13562 , H01L2224/13582 , H01L2224/13644 , H01L2224/13655 , H01L2224/16145 , H01L2224/16148 , H01L2224/16225 , H01L2224/16227 , H01L2224/16238 , H01L2224/81193 , H01L2224/81203 , H01L2224/81815 , H01L2924/00011 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/14 , H01L2924/00014 , H01L2924/0105 , H01L2224/05552 , H01L2924/00 , H01L2224/81805
摘要： An integrated circuit structure includes a first work piece and a second work piece. The first work piece includes a copper bump at a main surface of the first work piece and having a first dimension; and a nickel-containing barrier layer over and adjoining the copper bump. The second work piece is bonded to the first work piece and includes a bond pad at a main surface of the second work piece; and a solder mask at the main surface of the second work piece and having a solder resist opening with a second dimension exposing a portion of the bond pad. A ratio of the first dimension to the second dimension is greater than about 1. Further, a solder region electrically connects the copper bump to the bond pad, with a vertical distance between the bond pad and the copper bump being greater than about 30 μm.
摘要翻译： 集成电路结构包括第一工件和第二工件。 第一工件包括在第一工件的主表面处的铜凸块并且具有第一尺寸; 以及在铜凸块上并邻接铜凸点的含镍阻挡层。 第二工件被接合到第一工件并且在第二工件的主表面上包括接合焊盘; 以及在第二工件的主表面处的焊料掩模，并且具有暴露焊接焊盘的一部分的具有第二尺寸的阻焊剂开口。 第一尺寸与第二尺寸的比率大于约1.此外，焊料区域将铜凸块电连接到接合焊盘，接合焊盘和铜凸块之间的垂直距离大于约30μm。
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公开(公告)号：US09425136B2
公开(公告)日：2016-08-23
申请号：US13449078
申请日：2012-04-17
申请人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
发明人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
IPC分类号： H01L29/49 , H01L23/498 , H01L23/00
CPC分类号： H01L24/13 , H01L23/49816 , H01L24/11 , H01L24/16 , H01L2224/0361 , H01L2224/03912 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/11474 , H01L2224/11903 , H01L2224/13012 , H01L2224/13014 , H01L2224/13017 , H01L2224/13025 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/16238 , H01L2224/81191 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A pillar structure for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.
摘要翻译： 提供了一种用于衬底的柱结构。 支柱结构可以具有一个或多个层，其中每个层可以具有圆锥形或球形。 在一个实施例中，柱结构用于跟踪跟踪（BOT）配置。 支柱结构在平面图中可以具有圆形或细长形状。 衬底可以耦合到另一衬底。 在一个实施例中，另一衬底可以具有凸起的导电迹线，柱结构可以联接到该导电迹线上。
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公开(公告)号：US20140070402A1
公开(公告)日：2014-03-13
申请号：US13611226
申请日：2012-09-12
申请人： Yao-Chun Chuang , Yu-Chen Hsu , Hao-Juin Liu , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
发明人： Yao-Chun Chuang , Yu-Chen Hsu , Hao-Juin Liu , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
CPC分类号： H01L25/50 , H01L21/563 , H01L23/3192 , H01L23/562 , H01L24/11 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L2224/0401 , H01L2224/05022 , H01L2224/05572 , H01L2224/10125 , H01L2224/13022 , H01L2224/13111 , H01L2224/13147 , H01L2224/14133 , H01L2224/14135 , H01L2224/16145 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06582 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2224/05552
摘要： A structure comprises a plurality of connectors formed on a top surface of a first semiconductor die, a second semiconductor die formed on the first semiconductor die and coupled to the first semiconductor die through the plurality of connectors and a first dummy conductive plane formed between an edge of the first semiconductor die and the plurality of connectors, wherein an edge of the first dummy conductive plane and a first distance to neutral point (DNP) direction form a first angle, and wherein the first angle is less than or equal to 45 degrees.
摘要翻译： 一种结构包括形成在第一半导体管芯的顶表面上的多个连接器，形成在第一半导体管芯上并通过多个连接器耦合到第一半导体管芯的第二半导体管芯，以及形成在第一半导体管芯的边缘 的第一半导体管芯和多个连接器，其中第一虚拟导电平面的边缘和中性点（DNP）方向的第一距离形成第一角度，并且其中第一角度小于或等于45度。
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公开(公告)号：US08659123B2
公开(公告)日：2014-02-25
申请号：US13247616
申请日：2011-09-28
申请人： Yao-Chun Chuang , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
发明人： Yao-Chun Chuang , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
IPC分类号： H01L23/58
CPC分类号： H01L24/05 , H01L23/291 , H01L23/293 , H01L23/3192 , H01L24/06 , H01L24/13 , H01L2224/02235 , H01L2224/0401 , H01L2224/05012 , H01L2224/05022 , H01L2224/05124 , H01L2224/05572 , H01L2224/05647 , H01L2224/05666 , H01L2224/06051 , H01L2224/06179 , H01L2224/13012 , H01L2224/13022 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2224/05552
摘要： A die includes a substrate, a metal pad over the substrate, and a passivation layer that has a portion over the metal pad. A dummy pattern is disposed adjacent to the metal pad. The dummy pattern is level with, and is formed of a same material as, the metal pad. The dummy pattern forms at least a partial ring surrounding at least a third of the metal pad.
摘要翻译： 芯片包括衬底，衬底上的金属焊盘以及在金属焊盘上方具有一部分的钝化层。 伪图案邻近金属垫设置。 虚拟图案与金属垫相同并且由与金属垫相同的材料形成。 虚设图案至少形成围绕金属垫的至少三分之一的部分环。
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公开(公告)号：US20130075872A1
公开(公告)日：2013-03-28
申请号：US13247616
申请日：2011-09-28
申请人： Yao-Chun Chuang , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
发明人： Yao-Chun Chuang , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
IPC分类号： H01L23/58
CPC分类号： H01L24/05 , H01L23/291 , H01L23/293 , H01L23/3192 , H01L24/06 , H01L24/13 , H01L2224/02235 , H01L2224/0401 , H01L2224/05012 , H01L2224/05022 , H01L2224/05124 , H01L2224/05572 , H01L2224/05647 , H01L2224/05666 , H01L2224/06051 , H01L2224/06179 , H01L2224/13012 , H01L2224/13022 , H01L2224/13083 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13164 , H01L2924/00014 , H01L2924/01029 , H01L2924/014 , H01L2924/01047 , H01L2924/00012 , H01L2224/05552
摘要： A die includes a substrate, a metal pad over the substrate, and a passivation layer that has a portion over the metal pad. A dummy pattern is disposed adjacent to the metal pad. The dummy pattern is level with, and is formed of a same material as, the metal pad. The dummy pattern forms at least a partial ring surrounding at least a third of the metal pad.
摘要翻译： 芯片包括衬底，衬底上的金属焊盘以及在金属焊盘上方具有一部分的钝化层。 伪图案邻近金属垫设置。 虚拟图案与金属垫相同并且由与金属垫相同的材料形成。 虚设图案至少形成围绕金属垫的至少三分之一的部分环。
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公开(公告)号：US20110193227A1
公开(公告)日：2011-08-11
申请号：US12729021
申请日：2010-03-22
IPC分类号： H01L23/488 , H01L21/60 , H01L23/31
CPC分类号： H01L23/49816 , H01L23/49811 , H01L23/49866 , H01L24/13 , H01L24/16 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13157 , H01L2224/13164 , H01L2224/13169 , H01L2224/16225 , H01L2224/16227 , H01L2224/73204 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01043 , H01L2924/01046 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/10329 , H01L2924/14 , H01L2924/15787 , H01L2924/181 , H01L2924/351 , H01L2924/00014 , H01L2924/01027 , H01L2924/01083 , H01L2924/01015 , H01L2224/13099 , H01L2924/00
摘要： Apparatus and methods for providing a robust solder connection in a flip chip arrangement using lead free solder are disclosed. A copper column extends from an input/output terminal of an integrated circuit. A cap layer of a material comprising one of nickel, nickel alloys, palladium, platinum, cobalt, silver, gold, and alloys of these is formed on the exterior surface of the copper column. A lead free solder connector is disposed on the cap layer. A substrate having a metal finish solder pad is aligned with the solder connector. A thermal reflow is performed. The metal finish may be of nickel, nickel alloy and nickel based materials. Following a thermal reflow, the solder connection formed between the copper terminal column and the metal finish solder pad is less than 0.5 wt. %.
摘要翻译： 公开了使用无铅焊料在倒装芯片布置中提供坚固的焊接连接的装置和方法。 铜列从集成电路的输入/输出端子延伸。 包含镍，镍合金，钯，铂，钴，银，金及其合金的材料的盖层形成在铜柱的外表面上。 无铅焊料连接器设置在盖层上。 具有金属整理剂焊盘的基板与焊料连接器对准。 进行热回流。 金属表面可以是镍，镍合金和镍基材料。 在热回流之后，形成在铜端子柱和金属表面焊料焊盘之间的焊接连接小于0.5wt。 ％。
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公开(公告)号：US20130270699A1
公开(公告)日：2013-10-17
申请号：US13449078
申请日：2012-04-17
申请人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
发明人： Tin-Hao Kuo , Chen-Shien Chen , Mirng-Ji Lii , Chen-Hua Yu , Sheng-Yu Wu , Yao-Chun Chuang
IPC分类号： H01L23/498
CPC分类号： H01L24/13 , H01L23/49816 , H01L24/11 , H01L24/16 , H01L2224/0361 , H01L2224/03912 , H01L2224/11462 , H01L2224/11464 , H01L2224/11472 , H01L2224/11474 , H01L2224/11903 , H01L2224/13012 , H01L2224/13014 , H01L2224/13017 , H01L2224/13025 , H01L2224/1308 , H01L2224/13083 , H01L2224/13111 , H01L2224/13147 , H01L2224/13155 , H01L2224/13184 , H01L2224/16238 , H01L2224/81191 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： A pillar structure for a substrate is provided. The pillar structure may have one or more tiers, where each tier may have a conical shape or a spherical shape. In an embodiment, the pillar structure is used in a bump-on-trace (BOT) configuration. The pillar structures may have circular shape or an elongated shape in a plan view. The substrate may be coupled to another substrate. In an embodiment, the another substrate may have raised conductive traces onto which the pillar structure may be coupled.
摘要翻译： 提供了一种用于衬底的柱结构。 支柱结构可以具有一个或多个层，其中每个层可以具有圆锥形或球形。 在一个实施例中，柱结构用于跟踪跟踪（BOT）配置。 支柱结构在平面图中可以具有圆形或细长形状。 衬底可以耦合到另一衬底。 在一个实施例中，另一衬底可以具有凸起的导电迹线，柱结构可以联接到该导电迹线上。
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公开(公告)号：US09257412B2
公开(公告)日：2016-02-09
申请号：US13611226
申请日：2012-09-12
申请人： Yao-Chun Chuang , Yu-Chen Hsu , Hao-Juin Liu , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
发明人： Yao-Chun Chuang , Yu-Chen Hsu , Hao-Juin Liu , Chita Chuang , Chen-Cheng Kuo , Chen-Shien Chen
CPC分类号： H01L25/50 , H01L21/563 , H01L23/3192 , H01L23/562 , H01L24/11 , H01L24/13 , H01L24/16 , H01L25/0657 , H01L2224/0401 , H01L2224/05022 , H01L2224/05572 , H01L2224/10125 , H01L2224/13022 , H01L2224/13111 , H01L2224/13147 , H01L2224/14133 , H01L2224/14135 , H01L2224/16145 , H01L2224/73204 , H01L2225/06513 , H01L2225/06527 , H01L2225/06582 , H01L2924/00014 , H01L2924/01047 , H01L2924/01029 , H01L2924/00012 , H01L2224/05552
摘要： A structure comprises a plurality of connectors formed on a top surface of a first semiconductor die, a second semiconductor die formed on the first semiconductor die and coupled to the first semiconductor die through the plurality of connectors and a first dummy conductive plane formed between an edge of the first semiconductor die and the plurality of connectors, wherein an edge of the first dummy conductive plane and a first distance to neutral point (DNP) direction form a first angle, and wherein the first angle is less than or equal to 45 degrees.
摘要翻译： 一种结构包括形成在第一半导体管芯的顶表面上的多个连接器，形成在第一半导体管芯上并通过多个连接器耦合到第一半导体管芯的第二半导体管芯，以及形成在第一半导体管芯的边缘 的第一半导体管芯和多个连接器，其中第一虚拟导电平面的边缘和中性点（DNP）方向的第一距离形成第一角度，并且其中第一角度小于或等于45度。
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