Invention Grant
- Patent Title: Method of manufacturing three-dimensional circuit device
- Patent Title (中): 制造三维电路装置的方法
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Application No.: US12908217Application Date: 2010-10-20
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Publication No.: US08479387B2Publication Date: 2013-07-09
- Inventor: Cheng-Feng Chiang
- Applicant: Cheng-Feng Chiang
- Applicant Address: TW Taoyuan Hsien
- Assignee: Kuang Hong Precision Co., Ltd.
- Current Assignee: Kuang Hong Precision Co., Ltd.
- Current Assignee Address: TW Taoyuan Hsien
- Agency: WPAT, P.C.
- Agent Anthony King
- Main IPC: H01K3/22
- IPC: H01K3/22

Abstract:
In a method of manufacturing a three-dimensional (3D) circuit device, conducting circuits are formed on a non-conductive base through electroplating. The non-conductive base, and a circuit pattern section, at least one conducting junction and at least one current-guiding junction provided on the base are formed through double injection molding process. An electrically conductive interface layer is formed on the circuit pattern section and the junctions; and then, metal circuits are formed on the circuit pattern section through electroplating. By providing the conducting junction and the current-guiding junction, when forming metal circuits through electroplating, electroplating current can be evenly distributed over the circuit pattern section to form metal coating with uniform thickness, which enables upgraded production efficiency and reduced cost in manufacturing a 3D circuit device.
Public/Granted literature
- US20110278055A1 THREE-DIMENSIONAL CIRCUIT DEVICE AND METHOD OF MANUFACTURING SAME Public/Granted day:2011-11-17
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