发明授权
- 专利标题: Method of forming a patterned layer of a material on a substrate
- 专利标题(中): 在衬底上形成材料的图案化层的方法
-
申请号: US13015299申请日: 2011-01-27
-
公开(公告)号: US08480942B2公开(公告)日: 2013-07-09
- 发明人: Mark A Shannon , Junghoon Yeom
- 申请人: Mark A Shannon , Junghoon Yeom
- 申请人地址: US IL Urbana
- 专利权人: The Board of Trustees of the University of Illinois
- 当前专利权人: The Board of Trustees of the University of Illinois
- 当前专利权人地址: US IL Urbana
- 代理机构: Brinks Hofer Gilson & Lione
- 主分类号: B32B38/10
- IPC分类号: B32B38/10
摘要:
A method of forming a patterned layer of a material on a substrate includes forming a layer of the material on a stamp, and contacting the stamp with a first substrate comprising a pattern of protruding and recessed features to bring a first portion of the layer into conformal contact with the protruding features. The stamp is then removed from the first substrate. The first portion of the layer remains in conformal contact with the protruding features, and a second portion of the layer opposite the recessed features is removed with the stamp. Accordingly, a patterned layer is formed on the stamp inverse to the pattern on the first substrate. The method may further include transferring the patterned layer on the stamp to a second substrate.
公开/授权文献
信息查询