发明授权
US08481106B2 High-dielectric constant thin film metal oxides on silicon wafers for capacitor applications and methods of manufacture
有权
用于电容器应用的硅晶片上的高介电常数薄膜金属氧化物和制造方法
- 专利标题： High-dielectric constant thin film metal oxides on silicon wafers for capacitor applications and methods of manufacture
- 专利标题（中）： 用于电容器应用的硅晶片上的高介电常数薄膜金属氧化物和制造方法
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申请号： US12043309申请日： 2008-03-06
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公开(公告)号： US08481106B2公开(公告)日： 2013-07-09
- 发明人: Shyama P. Mukherjee , Mark L. F. Phillips , Travis P. S. Thoms
- 申请人： Shyama P. Mukherjee , Mark L. F. Phillips , Travis P. S. Thoms
- 申请人地址： US NM Albuquerque
- 专利权人： SBA Materials, Inc.
- 当前专利权人： SBA Materials, Inc.
- 当前专利权人地址： US NM Albuquerque
- 代理机构： Berliner & Associates
- 主分类号： B05D5/12
- IPC分类号： B05D5/12 ; B05D3/00 ; C23C14/02 ; H01G7/00
摘要：
A method of fabrication of high-k paraelectric metal oxide films at low temperatures utilizing ordered mesoporous metal oxide thin films synthesized by organic templating methodology. The process consisting of (a) chemical solution deposition of periodic ordered mesoporous structures containing high-k metal oxide films, (b) removal of organic template additives, (c) infiltration of the pores with an appropriate second phase, and (d) low temperature thermal and/or annealing of infiltrated films.
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