Invention Grant
- Patent Title: Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidation
- Patent Title (中): 通过选择性光增强湿氧化从生长衬底分离氮化膜的方法
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Application No.: US13086787Application Date: 2011-04-14
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Publication No.: US08481353B2Publication Date: 2013-07-09
- Inventor: Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
- Applicant: Lung-Han Peng , Jeng-Wei Yu , Po-Chun Yeh
- Applicant Address: TW Hsinchu
- Assignee: Opto Tech Corporation
- Current Assignee: Opto Tech Corporation
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, PC
- Agent Justin King
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Various embodiments of the present disclosure pertain to separating nitride films from growth substrates by selective photo-enhanced wet oxidation. In one aspect, a method may transform a portion of a III-nitride structure that bonds with a first substrate structure into a III-oxide layer by selective photo-enhanced wet oxidation. The method may further separate the first substrate structure from the III-nitride structure.
Public/Granted literature
- US20120264247A1 Method of Separating Nitride Films from the Growth Substrates by Selective Photo-Enhanced Wet Oxidation Public/Granted day:2012-10-18
Information query
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