发明授权
- 专利标题: Semiconductor device and manufacturing method therefor
- 专利标题(中): 半导体装置及其制造方法
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申请号: US13094668申请日: 2011-04-26
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公开(公告)号: US08481366B2公开(公告)日: 2013-07-09
- 发明人: Masahiko Harayama , Kouichi Meguro , Junichi Kasai
- 申请人: Masahiko Harayama , Kouichi Meguro , Junichi Kasai
- 申请人地址: US CA Sunnyvale
- 专利权人: Spansion LLC
- 当前专利权人: Spansion LLC
- 当前专利权人地址: US CA Sunnyvale
- 优先权: JP2007-254537 20070928
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A semiconductor device is provided that includes a semiconductor chip and a resin section that molds the semiconductor chip and has a first through-hole. A through electrode that is electrically coupled to the semiconductor chip, extends through the resin section, and extends between a top edge and a bottom edge of an inner surface of the first through-hole. A cavity which extends between planes corresponding to an upper surface and a lower surface of the resin section is formed inside the first through-hole.
公开/授权文献
- US20110201152A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 公开/授权日:2011-08-18
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