发明授权
- 专利标题: Ion source, ion beam processing/observation apparatus, charged particle beam apparatus, and method for observing cross section of sample
- 专利标题(中): 离子源,离子束处理/观察装置,带电粒子束装置和观察样品截面的方法
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申请号: US12108037申请日: 2008-04-23
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公开(公告)号: US08481980B2公开(公告)日: 2013-07-09
- 发明人: Hiroyasu Shichi , Satoshi Tomimatsu , Kaoru Umemura , Noriyuki Kaneoka , Koji Ishiguro
- 申请人: Hiroyasu Shichi , Satoshi Tomimatsu , Kaoru Umemura , Noriyuki Kaneoka , Koji Ishiguro
- 申请人地址: JP Tokyo
- 专利权人: Hitachi High-Technologies Corporation
- 当前专利权人: Hitachi High-Technologies Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Mattingly & Malur, PC
- 优先权: JP2007-113358 20070423; JP2007-161691 20070619
- 主分类号: G21K5/10
- IPC分类号: G21K5/10
摘要:
An ion beam machining and observation method relevant to a technique of cross sectional observation of an electronic component, through which a sample is machined by using an ion beam and a charged particle beam processor capable of reducing the time it takes to fill up a processed hole with a high degree of flatness at the filled area. The observation device is capable of switching the kind of gas ion beam used for machining a sample with the kind of a gas ion beam used for observing the sample. To implement the switch between the kind of a gas ion beam used for sample machining and the kind of a gas ion beam used for sample observation, at least two gas introduction systems are used, each system having a gas cylinder a gas tube, a gas volume control valve, and a stop valve.
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