发明授权
- 专利标题： Molecular element, manufacturing method thereof, integrated circuit device, manufacturing method thereof, three-dimensional integrated circuit device, and manufacturing method thereof
- 专利标题（中）： 分子元件及其制造方法，集成电路器件，其制造方法，三维集成电路器件及其制造方法
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申请号： US13119674申请日： 2009-09-01
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公开(公告)号： US08482000B2公开(公告)日： 2013-07-09
- 发明人: Eriko Matsui
- 申请人： Eriko Matsui
- 申请人地址： JP Tokyo
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： K&L Gates, LLP
- 优先权： JP2008-240288 20080919
- 国际申请： PCT/JP2009/065250 WO 20090901
- 国际公布： WO2010/032608 WO 20100325
- 主分类号： H01L27/28
- IPC分类号： H01L27/28
摘要：
In one example embodiment, a molecular element is configured by bridging a gap between a source electrode and a drain electrode by a functional molecule. The functional molecule arises from covalent linkage of a side chain composed of a pendant molecule that has dielectric constant anisotropy and/or dipole moments and in which orientation change occurs due to an electric field to a main chain composed of a conjugated molecule in which structural change occurs due to the orientation change of the pendant molecule and an electrical characteristic changes. The molecular element is made to work as a diode, a transistor, or a memory by an electric field applied to the pendant molecule of the functional molecule by gate electrodes.
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