Invention Grant
US08482048B2 Metal oxide semiconductor field effect transistor integrating a capacitor
有权
集成电容器的金属氧化物半导体场效应晶体管
- Patent Title: Metal oxide semiconductor field effect transistor integrating a capacitor
- Patent Title (中): 集成电容器的金属氧化物半导体场效应晶体管
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Application No.: US12947107Application Date: 2010-11-16
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Publication No.: US08482048B2Publication Date: 2013-07-09
- Inventor: Yan Xun Xue , Anup Bhalla , Hamza Yilmaz , Jun Lu
- Applicant: Yan Xun Xue , Anup Bhalla , Hamza Yilmaz , Jun Lu
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha & Omega Semiconductor, Inc.
- Current Assignee: Alpha & Omega Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: CH Emily LLC
- Agent Chein-Hwa Tsao
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94
Abstract:
A bypass capacitor is directly integrated on top of a MOSFET chip. The capacitor comprises multi layers of conductive material and dielectric material staking on top of each other with connection vias through dielectric layer for connecting different conductive layers. The method of integrating the bypass capacitor comprises repeating steps of depositing a dielectric layer, forming connection vias through the dielectric layer, depositing a conductive layer and patterning the conductive layer.
Public/Granted literature
- US20110062506A1 Metal Oxide Semiconductor Field Effect Transistor Integrating a Capacitor Public/Granted day:2011-03-17
Information query
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