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发明授权
US08482048B2 Metal oxide semiconductor field effect transistor integrating a capacitor 有权
集成电容器的金属氧化物半导体场效应晶体管

Metal oxide semiconductor field effect transistor integrating a capacitor
摘要：
A bypass capacitor is directly integrated on top of a MOSFET chip. The capacitor comprises multi layers of conductive material and dielectric material staking on top of each other with connection vias through dielectric layer for connecting different conductive layers. The method of integrating the bypass capacitor comprises repeating steps of depositing a dielectric layer, forming connection vias through the dielectric layer, depositing a conductive layer and patterning the conductive layer.
摘要（中）：

旁路电容直接集成在MOSFET芯片的顶部。 电容器包括多层导电材料和电介质材料，它们通过介电层连接不同导电层的连接通孔彼此顶部。 集成旁路电容器的方法包括沉积介电层的重复步骤，形成通过电介质层的连接通孔，沉积导电层和图案化导电层。

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