发明授权
- 专利标题: Substrate processing apparatus and method of manufacturing a semiconductor device
- 专利标题(中): 基板处理装置及半导体装置的制造方法
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申请号: US13239902申请日: 2011-09-22
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公开(公告)号: US08486222B2公开(公告)日: 2013-07-16
- 发明人: Tokunobu Akao , Unryu Ogawa , Masahisa Okuno , Shinji Yashima , Atsushi Umekawa , Kaichiro Minami
- 申请人: Tokunobu Akao , Unryu Ogawa , Masahisa Okuno , Shinji Yashima , Atsushi Umekawa , Kaichiro Minami
- 申请人地址: JP Tokyo
- 专利权人: Hitachi Kokusai Electric Inc.
- 当前专利权人: Hitachi Kokusai Electric Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: Volpe and Koenig, P.C.
- 优先权: JP2010-241891 20101028; JP2011-140105 20110624
- 主分类号: C23F1/00
- IPC分类号: C23F1/00 ; H01L21/306
摘要:
A substrate processing apparatus includes a processing chamber configured to process a substrate, a substrate support member provided within the processing chamber to support the substrate, a microwave generator provided outside the processing chamber, a waveguide launch port configured to supply a microwave generated by the microwave generator into the processing chamber, wherein the central position of the waveguide launch port is deviated from the central position of the substrate supported on the substrate support member and the waveguide launch port faces a portion of a front surface of the substrate supported on the substrate support member, and a control unit configured to change a relative position of the substrate support member in a horizontal direction with respect to the waveguide launch port.
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