发明授权
- 专利标题: Method of manufacturing nano-structure and method of manufacturing a pattern using the method
- 专利标题(中): 使用该方法制造纳米结构的方法和制造图案的方法
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申请号: US12636202申请日: 2009-12-11
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公开(公告)号: US08486613B2公开(公告)日: 2013-07-16
- 发明人: Sang-Ouk Kim , Seong-Jun Jeong , Su-Mi Lee , Bong-Hoon Kim , Ji-Eun Kim , Jae-Ho You , Moon-Gyu Lee , Seung-Ho Nam
- 申请人: Sang-Ouk Kim , Seong-Jun Jeong , Su-Mi Lee , Bong-Hoon Kim , Ji-Eun Kim , Jae-Ho You , Moon-Gyu Lee , Seung-Ho Nam
- 申请人地址: KR KR
- 专利权人: Samsung Electronics Co., Ltd.,Korea Advanced Institute of Science and Technology
- 当前专利权人: Samsung Electronics Co., Ltd.,Korea Advanced Institute of Science and Technology
- 当前专利权人地址: KR KR
- 代理机构: Cantor Colburn LLP
- 主分类号: G03F7/26
- IPC分类号: G03F7/26
摘要:
According to an example embodiment of the present invention, a photoresist pattern is formed on a base substrate including a neutral layer. A sacrifice structure including a first sacrifice block and a second sacrifice block is formed on the base substrate having the photoresist pattern, and the sacrifice structure is formed from a first thin film including a first block copolymer. Thus, a chemical pattern is formed to form a nano-structure. Therefore, the nano-structure may be easily formed on a substrate having a large size by using a block copolymer, and productivity and manufacturing reliability may be improved.
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