发明授权
- 专利标题： Method for manufacturing solid-state imaging device
- 专利标题（中）： 固态成像装置的制造方法
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申请号： US13027638申请日： 2011-02-15
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公开(公告)号： US08486748B2公开(公告)日： 2013-07-16
- 发明人: Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
- 申请人： Harumi Ikeda , Susumu Hiyama , Takashi Ando , Kiyotaka Tabuchi , Tetsuji Yamaguchi , Yuko Ohgishi
- 申请人地址： JP
- 专利权人： Sony Corporation
- 当前专利权人： Sony Corporation
- 当前专利权人地址： JP
- 代理机构： Sheridan Ross P.C.
- 优先权： JP2007-122370 20070507; JP2007-333691 20071226
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L27/00
摘要：
A solid-state imaging device having a light-receiving section that photoelectrically converts incident light includes an insulating film formed on a light-receiving surface of the light-receiving section and a film and having negative fixed charges formed on the insulating film. A hole accumulation layer is formed on a light-receiving surface side of the light-receiving section. A peripheral circuit section in which peripheral circuits are formed is provided on a side of the light-receiving section. The insulating film is formed between a surface of the peripheral circuit section and the film having negative fixed charges such that a distance from the surface of the peripheral circuit section to the film having negative fixed charges is larger than a distance from a surface of the light-receiving section to the film having negative fixed charges.
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