Invention Grant
US08486824B2 Enhancing metal/low-K interconnect reliability using a protection layer
有权
使用保护层增强金属/低K互连可靠性
- Patent Title: Enhancing metal/low-K interconnect reliability using a protection layer
- Patent Title (中): 使用保护层增强金属/低K互连可靠性
-
Application No.: US13545844Application Date: 2012-07-10
-
Publication No.: US08486824B2Publication Date: 2013-07-16
- Inventor: Tong Yan Tee , Xueren Zhang , Shanzhong Wang , Valeriy Nosik , Jijie Zhou , Sridhar Idapalapati , Subodh Mhaisalkar , Zhi Yuan Shane Loo
- Applicant: Tong Yan Tee , Xueren Zhang , Shanzhong Wang , Valeriy Nosik , Jijie Zhou , Sridhar Idapalapati , Subodh Mhaisalkar , Zhi Yuan Shane Loo
- Applicant Address: SG Singapore SG Singapore
- Assignee: STMicroelectronics Asia Pacific PTE., Ltd.,Nanyang Technological University
- Current Assignee: STMicroelectronics Asia Pacific PTE., Ltd.,Nanyang Technological University
- Current Assignee Address: SG Singapore SG Singapore
- Agency: Munck Wilson Mandala, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/56

Abstract:
A protection layer is coated or otherwise formed over the interconnect structure. The interconnect structure includes a metal line (such as top and bottom metal layers connected by a metal via) and a low-K material. The protection layer includes a vertically aligned dielectric or other material dispersed with carbon nanotubes. The protection layer could include one or multiple layers of carbon nanotubes, and the carbon nanotubes could have any suitable dispersion, alignment, and pattern in each layer of the protection layer. Among other things, the carbon nanotubes help to reduce or prevent damage to the interconnect structure, such as by reducing or preventing the collapse of the low-K material or delamination between the metal line and the low-K material.
Public/Granted literature
- US20130012016A1 ENHANCING METAL/LOW-K INTERCONNECT RELIABILITY USING A PROTECTION LAYER Public/Granted day:2013-01-10
Information query
IPC分类: