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发明授权
US08487373B2 SONOS memory cells having non-uniform tunnel oxide and methods for fabricating same 有权
具有不均匀隧道氧化物的SONOS存储单元及其制造方法

SONOS memory cells having non-uniform tunnel oxide and methods for fabricating same
摘要：
Methods for forming a memory cell are disclosed. A method includes forming a source-drain structure in a semiconductor substrate where the source-drain structure includes a rounded top surface and sidewall surfaces. An oxide layer is formed on the top and sidewall surfaces of the source-drain structure. The thickness of the portion of the oxide layer that is formed on the top surface of the source-drain structure is greater than the thickness of the portion of the oxide layer that is formed on the sidewall surfaces of the source-drain structure.
摘要（中）：

公开了形成存储单元的方法。 一种方法包括在半导体衬底中形成源极 - 漏极结构，其中源极 - 漏极结构包括圆顶顶表面和侧壁表面。 在源极 - 漏极结构的顶壁和侧壁表面上形成氧化物层。 形成在源极 - 漏极结构的顶表面上的氧化物层的部分的厚度大于在源极 - 漏极结构的侧壁表面上形成的氧化物层的部分的厚度。

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