发明授权
- 专利标题： MEMS sensor device with multi-stimulus sensing
- 专利标题（中）： 具有多刺激感知的MEMS传感器装置
-
申请号： US13526279申请日： 2012-06-18
-
公开(公告)号： US08487387B2公开(公告)日： 2013-07-16
- 发明人: Yizhen Lin , Woo Tae Park , Mark E. Schlarmann , Hemant D. Desai
- 申请人： Yizhen Lin , Woo Tae Park , Mark E. Schlarmann , Hemant D. Desai
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理机构： Schmeiser, Olsen & Watts LLP
- 代理商 Lowell W. Gresham; Charlene R. Jacobsen
- 主分类号： H01L29/82
- IPC分类号： H01L29/82
摘要：
A device (20, 90) includes sensors (28, 30) that sense different physical stimuli. A pressure sensor (28) includes a reference element (44) and a sense element (52), and an inertial sensor (30) includes a movable element (54). Fabrication (110) entails forming (112) a first substrate structure (22, 92) having a cavity (36, 100), forming a second substrate structure (24) to include the sensors (28, 30), and coupling (128) the substrate structures so that the first sensor (28) is aligned with the cavity (36, 100) and the second sensor (30) is laterally spaced apart from the first sensor (28). Forming the second structure (24) includes forming (118) the sense element (52) from a material layer (124) of the second structure (24) and following coupling (128) of the substrate structures, concurrently forming (132) the reference element (44) and the movable element (54) in a wafer substrate (122) of the second structure (24).
公开/授权文献
- US20120256282A1 MEMS SENSOR DEVICE WITH MULTI-STIMULUS SENSING 公开/授权日：2012-10-11
信息查询
IPC分类:
