Invention Grant
- Patent Title: MEMS sensor device with multi-stimulus sensing
- Patent Title (中): 具有多刺激感知的MEMS传感器装置
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Application No.: US13526279Application Date: 2012-06-18
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Publication No.: US08487387B2Publication Date: 2013-07-16
- Inventor: Yizhen Lin , Woo Tae Park , Mark E. Schlarmann , Hemant D. Desai
- Applicant: Yizhen Lin , Woo Tae Park , Mark E. Schlarmann , Hemant D. Desai
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Schmeiser, Olsen & Watts LLP
- Agent Lowell W. Gresham; Charlene R. Jacobsen
- Main IPC: H01L29/82
- IPC: H01L29/82
Abstract:
A device (20, 90) includes sensors (28, 30) that sense different physical stimuli. A pressure sensor (28) includes a reference element (44) and a sense element (52), and an inertial sensor (30) includes a movable element (54). Fabrication (110) entails forming (112) a first substrate structure (22, 92) having a cavity (36, 100), forming a second substrate structure (24) to include the sensors (28, 30), and coupling (128) the substrate structures so that the first sensor (28) is aligned with the cavity (36, 100) and the second sensor (30) is laterally spaced apart from the first sensor (28). Forming the second structure (24) includes forming (118) the sense element (52) from a material layer (124) of the second structure (24) and following coupling (128) of the substrate structures, concurrently forming (132) the reference element (44) and the movable element (54) in a wafer substrate (122) of the second structure (24).
Public/Granted literature
- US20120256282A1 MEMS SENSOR DEVICE WITH MULTI-STIMULUS SENSING Public/Granted day:2012-10-11
Information query
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