发明授权
- 专利标题： Memory cell with stress-induced anisotropy
- 专利标题（中）： 具有应力诱导各向异性的记忆体
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申请号： US12418911申请日： 2009-04-06
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公开(公告)号： US08487390B2公开(公告)日： 2013-07-16
- 发明人: Dimitar V. Dimitrov , Ivan Petrov Ivanov , Shuiyuan Huang , Antoine Khoueir , Brian Lee , John Daniel Stricklin , Olle Gunnar Heinonen , Insik Jin
- 申请人： Dimitar V. Dimitrov , Ivan Petrov Ivanov , Shuiyuan Huang , Antoine Khoueir , Brian Lee , John Daniel Stricklin , Olle Gunnar Heinonen , Insik Jin
- 申请人地址： US CA Cupertino
- 专利权人： Seagate Technology LLC
- 当前专利权人： Seagate Technology LLC
- 当前专利权人地址： US CA Cupertino
- 代理机构： Mueting Raasch & Gebhardt PA
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; G11C11/14
摘要：
A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.
公开/授权文献
- US20100084724A1 MEMORY CELL WITH STRESS-INDUCED ANISOTROPY 公开/授权日：2010-04-08
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