发明授权
- 专利标题： Semiconductor device having bipolar transistor
- 专利标题（中）： 具有双极晶体管的半导体器件
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申请号： US13193178申请日： 2011-07-28
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公开(公告)号： US08487408B2公开(公告)日： 2013-07-16
- 发明人: Shinichi Komatsu
- 申请人： Shinichi Komatsu
- 申请人地址： JP Kanagawa
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Kanagawa
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2010-171132 20100729
- 主分类号： H01L29/73
- IPC分类号： H01L29/73
摘要：
A bipolar transistor of the invention has a second base region 116 which is formed in the surface layer of a deep well, placed between a first base region and a sinker, connected to the first base region, has an impurity concentration larger than that of the first base region, and has a depth shallower than that of the first base region; and a buried layer formed in a semiconductor layer, which has the top surface thereof brought into contact with the deep well and the sinker, and has an impurity concentration larger than that of the deep well.
公开/授权文献
- US20120025351A1 SEMICONDUCTOR DEVICE 公开/授权日：2012-02-02
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