发明授权
US08492079B2 Method of forming a pattern of an array of shapes including a blocked region
有权
形成包括阻挡区域的形状阵列的图案的方法
- 专利标题： Method of forming a pattern of an array of shapes including a blocked region
- 专利标题（中）： 形成包括阻挡区域的形状阵列的图案的方法
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申请号： US12430919申请日： 2009-04-28
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公开(公告)号： US08492079B2公开(公告)日： 2013-07-23
- 发明人: Chia-Chen Chen , Wu-Song Huang , Wai-Kin Li , Chandrasekhar Sarma
- 申请人： Chia-Chen Chen , Wu-Song Huang , Wai-Kin Li , Chandrasekhar Sarma
- 申请人地址： US NY Armonk DE Neubiberg
- 专利权人： International Business Machines Corporation,Infineon Technologies AG
- 当前专利权人： International Business Machines Corporation,Infineon Technologies AG
- 当前专利权人地址： US NY Armonk DE Neubiberg
- 代理机构： Scully, Scott, Murphy & Presser, P.C.
- 代理商 Yuanmin Cai
- 主分类号： G03F7/20
- IPC分类号： G03F7/20
摘要：
A second photoresist having a second photosensitivity is formed on a substrate. A first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on the second photoresist. Preferably, the first photoresist is a gray resist that becomes transparent upon exposure. At least one portion of the first photoresist is lithographically exposed employing a first reticle having a first pattern to form at least one transparent lithographically exposed resist portion, while the second photoresist remains intact. The second photoresist is lithographically exposed employing a second reticle including a second pattern to form a plurality of lithographically exposed shapes in the second photoresist. The plurality of lithographically exposed shapes have a composite pattern which is the derived from the second pattern by limiting the second pattern only within the area of the at least one transparent lithographically exposed resist pattern.
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