Invention Grant
US08492225B2 Integrated trench guarded schottky diode compatible with powerdie, structure and method
有权
集成沟槽保护肖特基二极管兼容电源，结构和方法
- Patent Title: Integrated trench guarded schottky diode compatible with powerdie, structure and method
- Patent Title (中): 集成沟槽保护肖特基二极管兼容电源，结构和方法
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Application No.: US12938589Application Date: 2010-11-03
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Publication No.: US08492225B2Publication Date: 2013-07-23
- Inventor: Dev Alok Girdhar , Francois Hebert
- Applicant: Dev Alok Girdhar , Francois Hebert
- Applicant Address: US CA Milpitas
- Assignee: Intersil Americas Inc.
- Current Assignee: Intersil Americas Inc.
- Current Assignee Address: US CA Milpitas
- Agency: Fogg & Powers LLC
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method and structure for a voltage converter including a trench field effect transistor (FET) and a trench guarded Schottky diode which is integrated with the trench FET. In an embodiment, a voltage converter can include a lateral FET, a trench FET, and a trench guarded Schottky diode integrated with the trench FET. A method to form a voltage converter can include the formation of a trench FET gate, a trench guarded Schottky diode gate, and a lateral FET gate using a single conductive layer such as a polysilicon layer.
Public/Granted literature
- US20110156679A1 INTEGRATED TRENCH GUARDED SCHOTTKY DIODE COMPATIBLE WITH POWERDIE, STRUCTURE AND METHOD Public/Granted day:2011-06-30
Information query
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