发明授权
US08492852B2 Interface structure for channel mobility improvement in high-k metal gate stack
有权
高k金属栅极堆叠中沟道迁移率改善的接口结构
- 专利标题： Interface structure for channel mobility improvement in high-k metal gate stack
- 专利标题（中）： 高k金属栅极堆叠中沟道迁移率改善的接口结构
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申请号： US12792242申请日： 2010-06-02
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公开(公告)号： US08492852B2公开(公告)日： 2013-07-23
- 发明人: Tze-Chiang Chen , Dechao Guo , Philip J. Oldiges , Yanfeng Wang
- 申请人： Tze-Chiang Chen , Dechao Guo , Philip J. Oldiges , Yanfeng Wang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L21/31 ; H01L21/469
摘要：
A gate stack structure for field effect transistor (FET) devices includes a nitrogen rich first dielectric layer formed over a semiconductor substrate surface; a nitrogen deficient, oxygen rich second dielectric layer formed on the nitrogen rich first dielectric layer, the first and second dielectric layers forming, in combination, a bi-layer interfacial layer; a high-k dielectric layer formed over the bi-layer interfacial layer; a metal gate conductor layer formed over the high-k dielectric layer; and a work function adjusting dopant species diffused within the high-k dielectric layer and within the nitrogen deficient, oxygen rich second dielectric layer, and wherein the nitrogen rich first dielectric layer serves to separate the work function adjusting dopant species from the semiconductor substrate surface.
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