Invention Grant
US08492908B2 Atomic layer deposition encapsulation for power amplifiers in RF circuits
有权
RF电路中功率放大器的原子层沉积封装
- Patent Title: Atomic layer deposition encapsulation for power amplifiers in RF circuits
- Patent Title (中): RF电路中功率放大器的原子层沉积封装
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Application No.: US13654894Application Date: 2012-10-18
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Publication No.: US08492908B2Publication Date: 2013-07-23
- Inventor: John R. Siomkos , Merrill Albert Hatcher, Jr. , Jayanti Jaganatha Rao
- Applicant: RF Micro Devices, Inc.
- Applicant Address: US NC Greensboro
- Assignee: RF Micro Devices, Inc.
- Current Assignee: RF Micro Devices, Inc.
- Current Assignee Address: US NC Greensboro
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: H01L23/29
- IPC: H01L23/29
Abstract:
Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.
Public/Granted literature
- US20130038390A1 ATOMIC LAYER DEPOSITION ENCAPSULATION FOR POWER AMPLIFIERS IN RF CIRCUITS Public/Granted day:2013-02-14
Information query
IPC分类:
