公开(公告)号：US08492908B2

公开(公告)日：2013-07-23

申请号：US13654894

申请日：2012-10-18

Applicant: RF Micro Devices, Inc.

Inventor： John R. Siomkos ,  Merrill Albert Hatcher, Jr. ,  Jayanti Jaganatha Rao

IPC: H01L23/29

CPC classification number: H01L23/3185 ,  H01L23/291 ,  H01L24/48 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.

Abstract translation: 功率放大器和在功率放大器上涂覆氧化铝保护膜（Al 2 O 3）的方法在此公开。 通过原子层沉积（ALD）工艺施加保护膜。 ALD工艺可以以精确控制的方式在功率放大器的表面上沉积非常薄的氧化铝层。 因此，ALD工艺可以形成基本上不含针孔和空隙的均匀的膜。

公开(公告)号：US20130038390A1

公开(公告)日：2013-02-14

申请号：US13654894

申请日：2012-10-18

Applicant: RF MICRO DEVICES, INC.

Inventor： John R. Siomkos ,  Merrill Albert Hatcher, JR. ,  Jayanti Jaganatha Rao

IPC: H03F3/04

CPC classification number: H01L23/3185 ,  H01L23/291 ,  H01L24/48 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/00014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/3011 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: Power amplifiers and methods of coating a protective film of alumina (Al2O3) on the power amplifiers are disclosed herein. The protective film is applied through an atomic layer deposition (ALD) process. The ALD process can deposit very thin layers of alumina on the surface of the power amplifier in a precisely controlled manner. Thus, the ALD process can form a uniform film that is substantially free of free of pin-holes and voids.

Abstract translation: 功率放大器和在功率放大器上涂覆氧化铝保护膜（Al 2 O 3）的方法在此公开。 通过原子层沉积（ALD）工艺施加保护膜。 ALD工艺可以以精确控制的方式在功率放大器的表面上沉积非常薄的氧化铝层。 因此，ALD工艺可以形成基本上不含针孔和空隙的均匀的膜。