Invention Grant
- Patent Title: Memcapacitive devices
- Patent Title (中): Memcapacitive设备
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Application No.: US12548124Application Date: 2009-08-26
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Publication No.: US08493138B2Publication Date: 2013-07-23
- Inventor: John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
- Applicant: John Paul Strachan , Gilberto Ribeiro , Dmitri Strukov
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
A memcapacitive device includes a first electrode having a first end and a second end and a second electrode. The device has a memcapacitive matrix interposed between the first electrode and the second electrode. The memcapacitive matrix has a non-linear capacitance with respect to a voltage across the first electrode and the second electrode. The memcapacitive matrix is configured to alter a signal applied on the first end by at least one of a) changing at least one of a rise-time and a fall-time of the signal and b) delaying the transmission of the signal based on the application of a programming voltage across the first electrode and the second electrode.
Public/Granted literature
- US20110051310A1 Memcapacitive Devices Public/Granted day:2011-03-03
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