Invention Grant
- Patent Title: Memory device and program method thereof
- Patent Title (中): 存储器件及其程序方法
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Application No.: US12580579Application Date: 2009-10-16
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Publication No.: US08493782B2Publication Date: 2013-07-23
- Inventor: Jinhyuk Kim , Donggi Lee , Taesung Jung , Byungse So , Duckhyun Chang , SangLyul Min , Bryan Suk Joon Kim
- Applicant: Jinhyuk Kim , Donggi Lee , Taesung Jung , Byungse So , Duckhyun Chang , SangLyul Min , Bryan Suk Joon Kim
- Applicant Address: KR Gyeonggi-do KR Seoul
- Assignee: Samsung Electronics Co., Ltd.,Seoul National University R&DB Foundation
- Current Assignee: Samsung Electronics Co., Ltd.,Seoul National University R&DB Foundation
- Current Assignee Address: KR Gyeonggi-do KR Seoul
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0105759 20081028
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
Provided are a flash memory system and a driving method thereof. A flash memory device according to an embodiment of the present invention includes a memory cell array including a plurality of memory cells, and a control logic. The control logic performs control for one-bit information to be stored in the plurality of memory cells. The control logic controls storing data in the plurality of memory cells multiple times without an erasion operation. Accordingly, the flash memory device does not execute an erasion operation, increasing an operation speed.
Public/Granted literature
- US20100103735A1 MEMORY DEVICE AND PROGRAM METHOD THEREOF Public/Granted day:2010-04-29
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