发明授权
US08493789B2 Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
有权
非易失性存储器件，其通道升压方法，其编程方法以及包括其的存储器系统
- 专利标题： Nonvolatile memory devices, channel boosting methods thereof, programming methods thereof, and memory systems including the same
- 专利标题（中）： 非易失性存储器件，其通道升压方法，其编程方法以及包括其的存储器系统
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申请号： US13152776申请日： 2011-06-03
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公开(公告)号： US08493789B2公开(公告)日： 2013-07-23
- 发明人: ChiWeon Yoon , Donghyuk Chae , Sang-Wan Nam , Sung-won Yun
- 申请人： ChiWeon Yoon , Donghyuk Chae , Sang-Wan Nam , Sung-won Yun
- 申请人地址： KR Gyeonggi-Do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Gyeonggi-Do
- 代理机构： Harness, Dickey & Pierce, P.L.C.
- 优先权： KR10-2010-0077473 20100811
- 主分类号： G11C11/34
- IPC分类号： G11C11/34 ; G11C16/04
摘要：
Non-volatile memory device channel boosting methods in which at least two strings are connected to one bit line, the channel boosting methods including applying an initial channel voltage to channels of strings in a selected memory block, floating inhibit strings each having an un-programmed cell among the strings, and boosting channels of the floated inhibit strings.
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