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    NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE STRUCTURE
    3.
    发明申请
    NONVOLATILE MEMORY DEVICE INCLUDING MULTI-PLANE STRUCTURE 审中-公开

    公开(公告)号：US20170140824A1

    公开(公告)日：2017-05-18

    申请号：US15342027

    申请日：2016-11-02

    申请人： DONGHUN KWAK ,  DAESEOK BYEON ,  CHIWEON YOON

    发明人： DONGHUN KWAK ,  DAESEOK BYEON ,  CHIWEON YOON

    IPC分类号： G11C16/08 ,  G11C16/04

    CPC分类号： G11C16/08 ,  G11C16/0483

    摘要： A nonvolatile memory device includes a memory cell array having a first plane and a second plane and an address decoder connected to the first plane through first string select lines and connected to the second plane through second string select line. The address decoder provides a string select signal and a string unselect signal to the first and second string select lines. The address decoder independently provides the string select signal and the string unselect signal to the first and second string select lines in each plane based on different string select line addresses corresponding to the first and second planes.

    Nonvolatile memory device including multi-plane structure
    6.
    发明授权
    Nonvolatile memory device including multi-plane structure 有权

    公开(公告)号：US10056148B2

    公开(公告)日：2018-08-21

    申请号：US15342027

    申请日：2016-11-02

    申请人： Donghun Kwak ,  Daeseok Byeon ,  Chiweon Yoon

    发明人： Donghun Kwak ,  Daeseok Byeon ,  Chiweon Yoon

    IPC分类号： G11C11/00 ,  G11C16/08 ,  G11C16/04

    CPC分类号： G11C16/08 ,  G11C16/0483

    摘要： A nonvolatile memory device includes a memory cell array having a first plane and a second plane and an address decoder connected to the first plane through first string select lines and connected to the second plane through second string select line. The address decoder provides a string select signal and a string unselect signal to the first and second string select lines. The address decoder independently provides the string select signal and the string unselect signal to the first and second string select lines in each plane based on different string select line addresses corresponding to the first and second planes.

    Nonvolatile memory including plural memory cells stacked on substrate
    8.
    发明授权
    Nonvolatile memory including plural memory cells stacked on substrate 有权
    包括堆叠在基板上的多个存储单元的非易失性存储器

    公开(公告)号：US08743617B2

    公开(公告)日：2014-06-03

    申请号：US13429899

    申请日：2012-03-26

    申请人： Sang-Won Shim ,  Dong-Hun Kwak ,  Doosub Lee ,  Chiweon Yoon

    发明人： Sang-Won Shim ,  Dong-Hun Kwak ,  Doosub Lee ,  Chiweon Yoon

    IPC分类号： G11C11/34

    CPC分类号： G11C5/147 ,  G11C16/10 ,  G11C16/30 ,  G11C16/3418 ,  H01L27/11582

    摘要： According to example embodiments, a nonvolatile memory device includes a memory cell array including a plurality of memory cells stacked on a substrate, a plurality of word lines connected with the memory cell array, a plurality of pass voltage generators, and a voltage control circuit. The pass voltage generators each include a plurality of current paths and are configured to generate pass driving signals applied to unselected word lines of the plurality of word lines. The voltage control circuit is configured to control rising slopes of the pass driving signals generated from the plurality of pass voltage generators, based on adjusting the number of current paths in each pass voltage generator used to generate each driving signal.

    摘要翻译： 根据示例性实施例，非易失性存储器件包括存储单元阵列，其包括堆叠在衬底上的多个存储单元，与存储单元阵列连接的多个字线，多个通过电压发生器和电压控制电路。 通过电压发生器各自包括多个电流路径，并且被配置为产生施加到多个字线的未选字线的通过驱动信号。 电压控制电路被配置为基于调整用于产生每个驱动信号的每个通过电压发生器中的电流路径的数量来控制从多个通过电压发生器产生的通过驱动信号的上升沿。