Invention Grant
US08493809B2 Refresh control circuit and semiconductor memory apparatus using the same
有权
刷新控制电路和使用其的半导体存储装置
- Patent Title: Refresh control circuit and semiconductor memory apparatus using the same
- Patent Title (中): 刷新控制电路和使用其的半导体存储装置
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Application No.: US12958233Application Date: 2010-12-01
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Publication No.: US08493809B2Publication Date: 2013-07-23
- Inventor: Ki Hoon Lee
- Applicant: Ki Hoon Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: William Park & Associates Patent Ltd.
- Priority: KR10-2010-0083988 20100830
- Main IPC: G11C11/406
- IPC: G11C11/406 ; G11C8/12
Abstract:
A refresh control circuit is capable of activating a plurality of bank selection signals in response to a refresh command signal. Each of the plurality of bank selection signals is assigned to one of a plurality of bank groups. The refresh control circuit is configured to activate the plurality of bank selection signals when a refresh cycle selection signal is deactivated, and activate a part of the plurality of bank selection signals when the refresh cycle selection signal is activated.
Public/Granted literature
- US20120051169A1 REFRESH CONTROL CIRCUIT AND SEMICONDUCTOR MEMORY APPARATUS USING THE SAME Public/Granted day:2012-03-01
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