Invention Grant
- Patent Title: EDS protection diode with pwell-nwell resurf
- Patent Title (中): EDS保护二极管与pwell-nwell resurf
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Application No.: US11654736Application Date: 2007-01-17
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Publication No.: US08497167B1Publication Date: 2013-07-30
- Inventor: Vladislav Vashchenko , Vladimir Kuznetsov , Peter J. Hopper
- Applicant: Vladislav Vashchenko , Vladimir Kuznetsov , Peter J. Hopper
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L31/107
- IPC: H01L31/107 ; H01L23/60
Abstract:
A high voltage ESD protection diode wherein the p-n junction is defined by a p-well and an n-well and includes a RESURF region, the diode including a field oxide layer formed on top of the p-well and n-well, wherein the parameters of the diode are adjustable by controlling one or more of the junction width, the length of the RESURF region, or the length of the field oxide layer.
Information query
IPC分类:
