Self-assembly pattern for semiconductor integrated circuit

Invention Grant

US08497201B2 Self-assembly pattern for semiconductor integrated circuit 有权

Title translation: 半导体集成电路的自组装模式

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Patent Title: Self-assembly pattern for semiconductor integrated circuit
Patent Title (中): 半导体集成电路的自组装模式
Application No.: US13268191

Application Date: 2011-10-07
Publication No.: US08497201B2

Publication Date: 2013-07-30
Inventor: Tsung-Lin Lee , Clement Hsingjen Wann , Ching-Yu Chang
Applicant: Tsung-Lin Lee , Clement Hsingjen Wann , Ching-Yu Chang
Applicant Address: TW Hsin-Chu
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
Current Assignee Address: TW Hsin-Chu
Agency: Haynes and Boone, LLP
Main IPC: H01L21/4763
IPC: H01L21/4763

Self-assembly pattern for semiconductor integrated circuit

Abstract:

A method of fabricating a semiconductor device is provided which includes providing a substrate. A material layer is formed over the substrate. A polymer layer is formed over the material layer. A nano-sized feature is self-assembled using a portion of the polymer layer. The substrate is patterned using the nano-sized feature.

Abstract(Chinese):

提供一种制造半导体器件的方法，其包括提供衬底。材料层形成在衬底上。聚合物层形成在材料层上。使用聚合物层的一部分自组装纳米尺寸的特征。使用纳米尺寸的特征对衬底进行图案化。

Public/Granted literature

US20120028477A1 Self-Assembly Pattern for Semiconductor Integrated Circuit Public/Granted day:2012-02-02

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）