发明授权
US08497544B2 Repairing defects in a nonvolatile semiconductor memory module utilizing a heating element
失效
利用加热元件修复非易失性半导体存储器模块中的缺陷
- 专利标题： Repairing defects in a nonvolatile semiconductor memory module utilizing a heating element
- 专利标题（中）： 利用加热元件修复非易失性半导体存储器模块中的缺陷
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申请号： US13486977申请日： 2012-06-01
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公开(公告)号： US08497544B2公开(公告)日： 2013-07-30
- 发明人: Gary B. Bronner , Ming Li , Donald R. Mullen , Frederick Ware , Kevin S. Donnelly
- 申请人： Gary B. Bronner , Ming Li , Donald R. Mullen , Frederick Ware , Kevin S. Donnelly
- 申请人地址： US CA Sunnyvale
- 专利权人： Rambus Inc.
- 当前专利权人： Rambus Inc.
- 当前专利权人地址： US CA Sunnyvale
- 代理商 Charles Shemwell
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L21/8238
摘要：
A memory module includes multiple memory devices mounted to a substrate and one or more discrete heating elements disposed in thermal contact with the memory devices. Each of the memory devices includes charge-storing memory cells subject to operation-induced defects that degrade ability of the memory cells to store data. The discrete heating elements, or single discrete heating element, heats the memory devices to a temperature that anneals the defects.
公开/授权文献
- US20120236668A1 MEMORY MODULE WITH DISCRETE HEATING ELEMENT 公开/授权日：2012-09-20
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