Package substrates and semiconductor packages having the same

Invention Grant

US08497569B2 Package substrates and semiconductor packages having the same 有权

Title translation: 封装衬底和具有该衬底的半导体封装

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Patent Title: Package substrates and semiconductor packages having the same
Patent Title (中): 封装衬底和具有该衬底的半导体封装
Application No.: US13042855

Application Date: 2011-03-08
Publication No.: US08497569B2

Publication Date: 2013-07-30
Inventor: Jin-Woo Park , Hwan-Sik Lim , Eunchul Ahn
Applicant: Jin-Woo Park , Hwan-Sik Lim , Eunchul Ahn
Applicant Address: KR Suwon-si
Assignee: Samsung Electronics Co., Ltd.
Current Assignee: Samsung Electronics Co., Ltd.
Current Assignee Address: KR Suwon-si
Agency: Stanzione & Kim, LLP
Priority: KR10-2010-0020504 20100308
Main IPC: H01L21/311
IPC: H01L21/311

Package substrates and semiconductor packages having the same

Abstract:

A package substrate, a semiconductor package having the same, and a method for fabricating the semiconductor package. The semiconductor package includes a semiconductor chip, a package substrate, and a molding layer. The package substrate provides a region mounted with the semiconductor chip. The molding layer is configured to mold the semiconductor chip. The package substrate includes a first opening portion that provides an open region connected electrically to the semiconductor chip and extends beyond sides of the semiconductor chip to be electrically connected to the semiconductor chip.

Abstract(Chinese):

封装基板，具有该封装基板的半导体封装以及半导体封装的制造方法。半导体封装包括半导体芯片，封装基板和模制层。封装衬底提供安装有半导体芯片的区域。模制层被配置成模制半导体芯片。封装基板包括第一开口部分，该第一开口部分提供与半导体芯片电连接的开放区域，并且延伸超过半导体芯片的两侧以与半导体芯片电连接。

Public/Granted literature

US20110215444A1 PACKAGE SUBSTRATES, SEMICONDUCTOR PACKAGES HAVING THE SAME, AND METHODS OF FABRICATING THE SEMICONDUCTOR PACKAGES Public/Granted day:2011-09-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀