发明授权
- 专利标题: Semiconductor storage device
- 专利标题(中): 半导体存储设备
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申请号: US13191678申请日: 2011-07-27
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公开(公告)号: US08498144B2公开(公告)日: 2013-07-30
- 发明人: Masahiro Takahashi , Katsuyuki Fujita , Yoshihiro Ueda , Katsuhiko Hoya
- 申请人: Masahiro Takahashi , Katsuyuki Fujita , Yoshihiro Ueda , Katsuhiko Hoya
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2010-203345 20100910
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G11C11/15
摘要:
A semiconductor storage device includes first to fourth switch circuit. The semiconductor storage device includes a row decoder which controls a voltage of a word line. The semiconductor storage device includes a first selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a first resistance change element which is connected in series to the first selection transistor between the first bit line and the second bit line, and of which a resistance value changes according to a flowing current. The semiconductor storage device includes a second selection transistor of which a control terminal is connected to the word line. The semiconductor storage device includes a second resistance change element which is connected in series to the second selection transistor between the second bit line and the third bit line, and of which a resistance value changes according to a flowing current.
公开/授权文献
- US20120063215A1 SEMICONDUCTOR STORAGE DEVICE 公开/授权日:2012-03-15
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