发明授权
- 专利标题: Excited gas injection for ion implant control
- 专利标题(中): 激发气体注入用于离子注入控制
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申请号: US12328096申请日: 2008-12-04
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公开(公告)号: US08501624B2公开(公告)日: 2013-08-06
- 发明人: Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
- 申请人: Bon-Woong Koo , Victor Benveniste , Christopher A. Rowland , Craig R. Chaney , Frank Sinclair , Neil J. Bassom
- 申请人地址: US MA Gloucester
- 专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人: Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址: US MA Gloucester
- 主分类号: H01L21/302
- IPC分类号: H01L21/302 ; H01L21/461
摘要:
An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
公开/授权文献
- US20100140077A1 EXCITED GAS INJECTION FOR ION IMPLANT CONTROL 公开/授权日:2010-06-10